Conduction Mechanisms of Leakage Currents in InGaN/GaN-Based Light-Emitting Diodes

Han, Dong‐Pyo; Oh, Chang Sik; Kim, Hyunsung; Shim, Jong‐In; Kim, Kyu-Sang; Shin, Dong Soo

doi:10.1109/ted.2014.2381218

Cited by 46 publications

(15 citation statements)

References 22 publications

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“…The nearly linear dependence of ln(I)∝E (extracted from Fig. 4 (a)) for the vertical MOSFETs indicates that the dominant leakage mechanisms in our devices is variable-range hopping [37]. Fig.…”

Section: Resultsmentioning

confidence: 71%

GaN-on-Si Quasi-Vertical Power MOSFETs

Liu

Khadar

Matioli

2018

IEEE Electron Device Lett.

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Abstract-We demonstrate the first GaN vertical transistor on silicon, based on a 6.7-μm-thick n-p-n heterostructure grown on 6-inch silicon substrate by metal organic chemical vapor deposition (MOCVD). The devices consist of trench-gate quasi-vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) with a 4 μm-thick drift layer, exhibiting enhancement-mode (E-mode) operation with a threshold voltage of 6.3 V and an on/off ratio of over 10 8 . A high off-state breakdown voltage of 645 V along with a specific on-resistance of 6.8 mΩ•cm 2 were achieved thanks to the high-quality 4 μm-thick GaN drift layer presenting a relatively low defect density and very high electron mobility (720 cm 2 /V•s). This excellent performance represents a major step towards the realization of high-performance GaN vertical power transistors on low-cost silicon substrates.

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Section: Resultsmentioning

confidence: 71%

GaN-on-Si Quasi-Vertical Power MOSFETs

Liu

Khadar

Matioli

2018

IEEE Electron Device Lett.

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“…There are several possible leakage paths in the OFF-state [53,59,60]. In the quasivertical layout, parasitic leakage along the etch sidewalls and the bulk regions might be dominant and needs to be minimized.…”

Section: Off-state-leakage and Doping Constraints Of Quasi-vertical Gan-on-si Diodes From Imec Leuven Belgiummentioning

confidence: 99%

Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization

et al. 2021

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The vertical Gallium Nitride-on-Silicon (GaN-on-Si) trench metal-oxide-semiconductor field effect transistor (MOSFET) is a promising architecture for the development of efficient GaN-based power transistors on foreign substrates for power conversion applications. This work presents an overview of recent case studies, to discuss the most relevant challenges related to the development of reliable vertical GaN-on-Si trench MOSFETs. The focus lies on strategies to identify and tackle the most relevant reliability issues. First, we describe leakage and doping considerations, which must be considered to design vertical GaN-on-Si stacks with high breakdown voltage. Next, we describe gate design techniques to improve breakdown performance, through variation of dielectric composition coupled with optimization of the trench structure. Finally, we describe how to identify and compare trapping effects with the help of pulsed techniques, combined with light-assisted de-trapping analyses, in order to assess the dynamic performance of the devices.

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“…Therefore, these separated emission spots would be first observed at low currents. The mechanism of the carrier leakage via tunneling, assisted by the defect levels, was previously reported [24,25]. However, those works contribute the point-like emission under low forward bias to the carrier leakage, from the quantum well layer to the defect levels in the electron blocking layer and p-GaN.…”

Section: Resultsmentioning

confidence: 95%

Investigation of a Separated Short-Wavelength Peak in InGaN Red Light-Emitting Diodes

et al. 2021

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We fabricated indium gallium nitride (InGaN) red light-emitting diodes (LEDs) with a peak emission wavelength of 649 nm and investigated their electroluminescence (EL) properties. An additional separated peak in the EL spectrum of the red LEDs at 20 mA was observed at 465 nm. This additional peak also exhibits a blue-shift with increasing currents as does the main emission peak. Using high-resolution microscopy, we observed many point-like emission spots in the EL emission images at the currents below 1 mA. However, these emission spots cannot be identified at currents above 5 mA because the red emission from quantum wells (QWs) is much stronger than that emitted by these spots. Finally, we demonstrate that these emission spots are related to the defects generated in red QWs. The measured In content was lower at the vicinity of the defects, which was regarded as the reason for separated short-wavelength emission in red InGaN LEDs.

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Conduction Mechanisms of Leakage Currents in InGaN/GaN-Based Light-Emitting Diodes

Cited by 46 publications

References 22 publications

GaN-on-Si Quasi-Vertical Power MOSFETs

GaN-on-Si Quasi-Vertical Power MOSFETs

Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization

Investigation of a Separated Short-Wavelength Peak in InGaN Red Light-Emitting Diodes

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