We investigated the optical and electrical properties of red AlGaInP light-emitting diodes (LEDs) as functions of chip size, p-cladding layer thickness, and the number of multi-quantum wells (MQWs). External quantum efficiency (EQE) decreased with decreasing chip size. The ideality factor gradually increased from 1.47 to 1.95 as the chip size decreased from 350 μm to 15 μm. This indicates that the smaller LEDs experienced larger carrier loss due to Shockley-Read-Hall nonradiative recombination at sidewall defects. S parameter, defined as ∂lnL/∂lnI, increased with decreasing chip size. Simulations and experimental results showed that smaller LEDs with 5 pairs of MQWs had over 30% higher IQE at 5 A/cm than the LED with 20 pairs of MQWs. These results show that the optimization of the number of QWs is needed to obtain maximum EQE of micro-LEDs.

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Two kinds of InGaN-based light-emitting diodes (LEDs) are investigated to understand the nonradiative carrier recombination processes. Various temperature-dependent measurements such as external quantum efficiency, current-voltage, and electroluminescence spectra are utilized from 50 to 300 K. Based on these experimental results, we analyze the dominant nonradiative recombination mechanism for each LED device. We also analyze the effect of the dominant nonradiative recombination mechanism on the efficiency droop. On the basis of correlation between the efficiency droop and nonradiative recombination mechanisms, we discuss an approach to reducing the efficiency droop for each LED device.

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We investigate the current-dependent and temperature-dependent efficiency droops (“J-droop” and “T-droop”, respectively) in InGaN-based blue and AlGaInP-based red light-emitting diodes (LEDs). It is found that the blue and red LEDs show different droop behaviors with increasing current density and temperature. The J-droop is significant in the blue LED while the T-droop is severe in the red LED. In case of the blue LED, the carrier accumulation caused by the saturation of the radiative recombination rate is thought to increase the quasi-Fermi level rapidly, thus causing the J-droop. On the other hand, the T-droop of the red LED is influenced by redistribution of carriers due to the increased thermal energy with a small barrier height in the AlGaInP material system. The comparison of different droop characteristics of blue and red LEDs helps understand the recombination mechanisms of both LEDs and provides useful insight for improving the device performance further.

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