Conductance technique in MOSFETs: Study of interface trap properties in the depletion and weak inversion regimes

The C–V–f and G/ω–V–f characteristics of Al/SiO2/p-Si (MIS) structures

“…Therefore, the frequency dependent electrical characteristics are very important according to accuracy and reliable result. The characterization of interface states in MIS structure has become a subject of very intensive research in the last decade, and a number of workers have suggested various ways of characterization [5,[14][15][16][17][18][19]. The forward and reverse bias C-f and G/x-f measurements give the important information about the energy distribution of the interface states of the MIS structure.…”

Temperature and frequency dependent electrical and dielectric properties of Al/SiO2/p-Si (MOS) structure

“…Due to the presence of oxide layer and two surface-charge regions, MOS physics is more complicated than semiconductor surface physics. The importance in Si technology, the semiconductor/ insulator (Si/SiO 2 ) interface and defects on its neighborhood have been extensively studied in the past four decades [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16].…”

The C–V–f and G/ω–V–f characteristics of Au/SiO2/n-Si capacitors

“…To extract the series resistance of MOS structure, several methods have been suggested [10][11][12]. In this study, we have been used the conductance method developed by Nicollian and Goetzberger [3,27].…”

“…Due to the existence of oxide layer and two surface-charge regions, MOS physics is more complicated than semiconductor surface physics. The important role of these structures in Si technology, the semiconductor/insulator (Si/SiO 2 ) interface and defects on its neighborhood have been extensively studied in the past four decades [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16].…”