Concomitant incorporation of antimony and nitrogen in GaAsSbN lattice-matched to GaAs

Growth of strained GaAs1−ySby and GaAs1−y−zSbyNz quantum wells on InP substrates

“…From EMPA, the N mole fraction increases from 0.011 to 0.014 and the Sb mole fraction increases from 0.254 to 0.435 as the AsH 3 /V ratio is decreased, which is in agreement with Ref. [29] for GaAs 1ÀyÀz Sb y (N z ) on GaAs substrate. In Fig.…”

“…Previous reports indicated that an increase of In incorporation leads to a decrease of N incorporation in InGaAsN [27,28] and an increase of Sb incorporation leads to a decrease of N incorporation in GaAs 1ÀyÀz Sb y N z [29] when grown on a GaAs substrate. Note that it is not possible to uniquely determine the N content using HRXRD for the quaternary material.…”

Incorporation behaviors of group V elements in GaAsSbN grown by gas-source molecular-beam epitaxy

“…1, we conclude that N atoms tend to supplant the Sb atoms in the incorporation process. This finding, however, is in conflict with the observation of previous reports that adding Sb will enhance the incorporation rate of N [7][8][9][10]. Harmand et al attributed their Sb-dependent behavior to the dominance of metastable molecular N 2 * in their N source [7].…”

“…Understanding the incorporation behaviors of the three group-V elements is very essential for precise composition control, especially for the high-quality epilayers lattice-matched to GaAs. Previous studies on molecular-beam epitaxy (MBE) showed that adding Sb could enhance the incorporation of N [7][8][9][10]. In this paper, we report the behaviors of this promising dilute nitride grown by gas-source molecularbeam epitaxy (GSMBE).…”

Molecular beam epitaxy grown GaNAsSb 1eV photovoltaic cell

“…Under these conditions, $ 2% nitrogen and 6% Sb were incorporated into the GaNAsSb layer. The concentrations of N and Sb in the material were determined using X-ray diffraction analysis [16]. The Si source was calibrated to deliver 1 Â 10 15 cm À 3 n-type doping in the GaNAsSb:Si layer, taking into account the unintentional p-type doping level of the GaNAsSb layer grown under these conditions.…”