Molecular beam epitaxy grown GaNAsSb 1eV photovoltaic cell

Tan, Kang Hai; Wicaksono, Satrio; Loke, Wan Khai; Li, D.; Yoon, Soon Fatt; Fitzgerald, Eugene A.; Ringel, S. A.; Harris, James S.

doi:10.1016/j.jcrysgro.2011.09.023

Cited by 37 publications

(26 citation statements)

References 22 publications

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“…Moreover, the properties of these materials are very dependent on the growth conditions and post-growth thermal treatments [4][5][6][7]. Therefore, in order to obtain actual properties of the GaNAsSb alloy suitable for modeling purposes, several characterization techniques have been applied on GaNAsSb samples with doping levels in the range of 1•10 17 and 1•10 18 cm -3 for both n-type and p-type.…”

Section: Determination Of Ganassb Materials Parametersmentioning

confidence: 99%

“…Accordingly, in the following, we will use dilute nitride material diffusion lengths for the material (i.e. any Ga(In)NAs(Sb) material) similar to those already achieved experimentally [1,[4][5][6] (in the order of 10 times higher than the ones extracted from the EQE in Fig. 1.a) In order to usefully incorporate the Ga(In)NAs(Sb) into a 4Junction device, the demands on this material in terms of photocurrent are very high because this subcell receives the lowest spectral power density (the maximum photocurrent under ideal collection efficiency is 14.2 mA/cm 2 while for the other subcells it is about 16 mA/cm 2 ).…”

Section: Modeling the Performance Of 4-junction Solar Cellsmentioning

confidence: 99%

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Modelling of lattice matched dilute nitride 4-junction concentrator solar cells on Ge substrates

Ochoa¹,

García²,

Lombardero³

et al. 2016

AIP Conference Proceedings

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Abstract. Technology Computer Aided Design modeling is used to examine the performance under light concentration of a 4-J solar cell Ge-based that includes a 1-eV MBE-grown dilute nitride subcell. The 1-eV solar cell is modeled and examined by using material parameters extracted from detailed electro-optical characterization prior to be included into a multijunction structure. The modelling reveals the impact of the electric field-assisted collection in the performance of single junction solar cells and its effect when included in a 4-Junction solar cells. This effect is responsible for the lower FF (~15% lower) in the 4J when including the dilute nitride subcell, especially if it limits the photocurrent. Finally, an optimization procedure based on dilute nitrides with higher material quality is performed resulting in a 4-Junction solar cell with an efficiency of 47% for concentrations between 1000-2000 suns direct terrestrial spectrum.

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Section: Determination Of Ganassb Materials Parametersmentioning

confidence: 99%

Section: Modeling the Performance Of 4-junction Solar Cellsmentioning

confidence: 99%

Modelling of lattice matched dilute nitride 4-junction concentrator solar cells on Ge substrates

Ochoa¹,

García²,

Lombardero³

et al. 2016

AIP Conference Proceedings

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“…As such, these lower nitrogen content cells hold promise for improved performance (over 1-eV cells) due the reduced impact of nitrogen-related defects. In particular, dilute-nitride-antimonide alloys, such as GaAsSbN, could also be favorable over InGaAsN, since GaAsSbN materials grown by MBE have been reported to contain fewer nitrogen-related defects compared with InGaAsN materials [5]. In addition, Sb incorporation in dilute-nitride alloys gives rise to improve microstructure uniformity [6].…”

Section: Introductionmentioning

confidence: 99%

1.25-eV GaAsSbN/Ge Double-Junction Solar Cell Grown by Metalorganic Vapor Phase Epitaxy for High Efficiency Multijunction Solar Cell Application

Kim

et al. 2014

IEEE J. Photovoltaics

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Dilute-nitride-antimonide materials grown by metalorganic vapor phase epitaxy (MOVPE) with bandgap energies of 1.25 eV have been integrated into solar cell structures employing a Ge bottom cell on Ge substrate. Single homo-and heterojunction solar cells employing narrow bandgap GaAsSbN (E g ∼ 1.25 eV) are grown normally lattice-matched on a GaAs substrate, using MOVPE. Homojunction solar cell structures were realized by employing GaAsSbN material with low carbon background concentration and Si doping to form a p/n junction. External quantum efficiency measurements in the range (870 nm-1000 nm) reveal that the efficiency of the homojunction solar cell is significantly improved over that of the heterojunction structure. The GaAsSbN homojunction cell was integrated with a Ge single-junction bottom cell on Ge substrate. Under AM1.5 direct illumination, the fabricated GaAsSbN (1.24 eV)/Ge double-junction solar cell with a 600-nm-thick GaAsSbN base layer exhibits J sc , V o c , FF, and efficiency values of 11.59 mA/cm 2 , 0.83 V, 72.58%, and 7% with anti-reflection coating (ARC), respectively.

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“…However these materials have demonstrated short minority carrier diffusion [4] and collection [3] and typically devices rely on wide depletion regions or intrinsic layers. GaNAsSb has been developed as an alternative dilute nitride material [5]. In this paper results are presented for devices in order to investigate the role minority carrier diffusion plays in their performance.…”

Section: Introductionmentioning

confidence: 99%

GaNAsSb 1-eV solar cells for use in lattice-matched multi-junction architectures

Thomas

Führer

Alonso-Álvarez

et al. 2014

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)

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Photovoltaic devices made from a dilute nitride material, GaAsNSb, with band-gap close to 1eV have been developed and characterised. Homojunction devices of n-on-p and p-on-n type as well as an n-on-p GaAs/GaNAsSb heterojunction have been grown by molecular beam epitaxy. Optical and electrical characteristics are reported and a onedimensional drift-diffusion model of internal quantum efficiency is used to estimate minority carrier diffusion lengths. The GaAs/GaNAsSb heterostructure produced AM1.5G short-circuit current of 23.6 mA/cm 2 , open-circuit voltage of 0.44V and fill factor of 67%. The model suggests that this performance is limited by both diffusion length and surface recombination.

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Molecular beam epitaxy grown GaNAsSb 1eV photovoltaic cell

Cited by 37 publications

References 22 publications

Modelling of lattice matched dilute nitride 4-junction concentrator solar cells on Ge substrates

Modelling of lattice matched dilute nitride 4-junction concentrator solar cells on Ge substrates

1.25-eV GaAsSbN/Ge Double-Junction Solar Cell Grown by Metalorganic Vapor Phase Epitaxy for High Efficiency Multijunction Solar Cell Application

GaNAsSb 1-eV solar cells for use in lattice-matched multi-junction architectures

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