Computer simulation of a carbon-deposition plasma in CH/sub 4/

Rhallabi, A.; Catherine, Y.

doi:10.1109/27.106824

Cited by 77 publications

(43 citation statements)

References 32 publications

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“…Models have been developed based on the knowledge gained from ion beam experiments and computer simulations of the ion kinetics. Models by Robertson [27], Lifshitz et al [28], Fourches and Turban [29], Rhallabi and Catherine [30] and M611er [18,31] for a-C:H and amorphous carbon (a-C) have shown good correspondence between measurements and experiments. In all these models, the ion and, more specifically, the ion energy plays a crucial role.…”

Section: Fast Deposition Of A-c : Hmentioning

confidence: 91%

The role of hydrogen during plasma beam deposition of amorphous thin films

Sanden

Severens

Meulenbroeks

et al. 1995

Surface and Coatings Technology

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Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers)Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. AbstractThe influence of wall-associated H 2 molecules and other hydrogen-containing monomers on the degree of ionization in the expanding thermal plasma used for the fast plasma beam deposition of amorphous hydrogenated carbon (a-C : H) and amorphous hydrogenated silicon (a-Si:H) was determined. Deposition models are discussed with emphasis on the specific role of the ion during deposition. The connection between the role of atomic hydrogen and the degree of ionization in the plasma beam deposition of a-C : H and a-Si: H is addressed.

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Section: Fast Deposition Of A-c : Hmentioning

confidence: 91%

The role of hydrogen during plasma beam deposition of amorphous thin films

Sanden

Severens

Meulenbroeks

et al. 1995

Surface and Coatings Technology

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“…Thus, the rate equation for the primary molecules (Cl 2 and Ar in our case) with density N i (i=Cl 2 or Ar) is given as [26][27]:…”

Section: Global Kinetic Modelmentioning

confidence: 99%

“…T and T e are the gas and electron temperatures respectively. For the other neutral and ion species the balance equations are given as [26][27]: …”

Section: Global Kinetic Modelmentioning

confidence: 99%

“…Experimental studies concerning the chloride plasma discharges have been carried out to investigate the electrical and kinetic properties of mentioned plasma discharges [17][18][19][20][21][22][23]. Modelling of plasma discharge in different degrees of complexity, specially, for the chloride precursors have been developed by using different approaches [9,[24][25][26][27][28]] such as fluid model, Particle In Cell or global model to model the electro-magnetic phenomena transport of charged species in different types of reactors.…”

Section: Introductionmentioning

confidence: 99%

“…In this study, we have developed a kinetic model based on the global approach in which the densities of neutral and charged species produced in plasma are assumed spatially uniform [26][27][28]. Its advantage is to give approximate information about the reactive species transport with a reasonable simulation time.…”

Section: Introductionmentioning

confidence: 99%

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Atomic scale study of InP etching by Cl₂-Ar ICP plasma discharge

Rhallabi

Chanson

Landesman

et al. 2011

Eur. Phys. J. Appl. Phys.

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A gas phase kinetic model combined to a 3D atomic etching model have been developed to study the etching process of InP under Cl 2 -Ar ICP plasma discharge. A gas phase global kinetic model is used to calculate the reactive particle fluxes implied in the etching mechanisms. The 3D atomic InP etching model is based on the Monte-Carlo kinetic approach where the plasma surface interactions are described in the probability way. The coupling between the plasma chemistry model and the surface etching model is an interesting approach to predict the etched surface properties in term of the etch rate, the surface roughness and surface steochiometry as a function of the operating conditions.A satisfactory agreement is obtained by comparing the experimental and the simulation results concerning the evolution of the main plasma discharge parameters such as the electron density and temperature versus the ICP source power for surface recombination coefficient of atomic chlorine fixed at γ Cl =0.04. On the other hand, simulation results show the effect of the operating conditions on the etched surface roughness and the etch rate evolutions with time in the early stage. Moreover, the simulation results show the correlation between the decrease of the ion to chlorine flux ratio and the decrease of the RRMS as a function of the pressure.

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Controllable Synthesis of Graphene by Plasma‐Enhanced Chemical Vapor Deposition and Its Related Applications

et al. 2016

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Graphene and its derivatives hold a great promise for widespread applications such as field‐effect transistors, photovoltaic devices, supercapacitors, and sensors due to excellent properties as well as its atomically thin, transparent, and flexible structure. In order to realize the practical applications, graphene needs to be synthesized in a low‐cost, scalable, and controllable manner. Plasma‐enhanced chemical vapor deposition (PECVD) is a low‐temperature, controllable, and catalyst‐free synthesis method suitable for graphene growth and has recently received more attentions. This review summarizes recent advances in the PECVD growth of graphene on different substrates, discusses the growth mechanism and its related applications. Furthermore, the challenges and future development in this field are also discussed.

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Computer simulation of a carbon-deposition plasma in CH/sub 4/

Cited by 77 publications

References 32 publications

The role of hydrogen during plasma beam deposition of amorphous thin films

The role of hydrogen during plasma beam deposition of amorphous thin films

Atomic scale study of InP etching by Cl₂-Ar ICP plasma discharge

Controllable Synthesis of Graphene by Plasma‐Enhanced Chemical Vapor Deposition and Its Related Applications

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Computer simulation of a carbon-deposition plasma in CH/sub 4/

Cited by 77 publications

References 32 publications

The role of hydrogen during plasma beam deposition of amorphous thin films

The role of hydrogen during plasma beam deposition of amorphous thin films

Atomic scale study of InP etching by Cl2-Ar ICP plasma discharge

Controllable Synthesis of Graphene by Plasma‐Enhanced Chemical Vapor Deposition and Its Related Applications

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Product

Resources

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Atomic scale study of InP etching by Cl₂-Ar ICP plasma discharge