Computer analysis of the role of p-layer quality, thickness, transport mechanisms, and contact barrier height in the performance of hydrogenated amorphous silicon p-i-n solar cells

Abstract

Amorphous silicon pin solar cell with a twolayer back electrode Performance and analysis of amorphous silicon pin solar cells made by chemicalvapor deposition from disilane

Numerical simulation of barrier height effect on output parameters, for a a-Si:H/nc-Si:H based solar cell

“…In the past works and surprisingly, it was found that, for front contact barrier height values φ b0 less than some critical value, cell performances, in the absence of tunneling, depends strongly on the front contact barrier height regardless of the thickness or the quality of the player [6,7]. In AMPS, barriers at ITO/p interface and n/metal interface are described by φ b0 and φ bL respectively.…”

“…2, which shows the band diagram of a n-i-p'-p hetero-junction solar cell structure in thermodynamic equilibrium. According to J. Arch et al [6] description the barrier heights are related to the work functions (Ф w,front and Ф w,back ) of the contacts by:…”

Search for Factors Determining the Photodegradation in High-Efficiency a-Si:H-Based Solar Cells; Annual Technical Progress Report, 16 January 1998-15 January 1999

“…One needs to know how the electric field distribution changes with i-layer thickness and the Ge content, and how this affects the V oc and the quantum efficiency wavelength dependence. By using computer simulation, the relation of the electric field distribution with V oc of a-Si based alloy p-i-n cells under steady state light illumination has been studied by Hack et al [20] and Fonash et al [21]. The results show that the electric field E(x) decays exponentially from the junction interfaces.…”

Amorphous silicon research Phase I. Annual subcontract report, August 1, 1994--July 31, 1995

“…To study the effect of band edge discontinuities on a-Si:H and a-SiGe:H alloy solar cells withp pc-Si:H layers, we have carried out numerical simulations using the AMPS model developed at Penn State University (Arch et al 1991). calculated a-Si:H cell characteristics are tabulated in Tables 14 and 15, and compared with experimental results.…”