Computer-aided design of hybrid and monolithic broad-band amplifiers for optoelectronic receivers

Pérennec, André; Soares, R.; Jarry, Pierre; Legaud, P.; Goloubkoff, M.

doi:10.1109/22.32234

Cited by 19 publications

(2 citation statements)

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“…Considering the articles during 1980s [16][17][18][19][20][21][22][23][24][25][26][27][28][29], usage of GaAs FET was welcomed by engineers in this decade to fabricate monolithic wideband low-noise RF amplifiers [17-19, 28, 29]. Also, the abbreviation 'LNA' was utilised for the first time [27].…”

Section: In the 1980smentioning

confidence: 99%

“…They proposed different topologies and techniques such as distortion cancellation and notch filter to remove the effects of blockers and interferers, noise cancellation and g m ‐boosting to decrease noise figure (NF), common gate (CG) to have the input impedance matching, and also inductive peaking and g m ‐boosting to achieve gain flatness. This article comprehensively illustrates UWB LNA, such a book chapter for trained readers, which has not been carried out before [1–50, 51–100, 101–150, 151–200, …”

Section: Introductionmentioning

confidence: 99%

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Ultrawideband LNA 1960–2019: Review

Shahrabadi

2021

IET Circuits, Devices & Syst

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To the best of the author's knowledge, several studies during 1960-2019 were carried out on wideband and ultrawideband LNAs just to render optimum LNAs for SAW-less Radio-Frequency Integrated Circuits (RFICs) but none of these works reviewed and taught the proceedings of these six decades, hence the lack of a comprehensive review is quite noticeable. This article specifically studies the challenges and solutions of designing UWB LNA by reviewing topologies and techniques such as inductive peaking, noise and distortion cancellation, g m -boosting, active inductor and notch filter. Its historical aspect illustrates when the idea of wideband LNA was born and how it changed to ultrawideband LNA, and its tutorial aspect discusses circuits and achievements to present optimum LNAs in Complementary MOS (CMOS), BiCMOS and High-Electron-Mobility Transistor (HEMT) technologies. This work describes the endeavours of engineers in reaching UWB LNA from narrowband LNA during six decades that have great importance as a chapter in understanding this topic because it teaches all topologies, techniques, circuits and related events in a historical narrative for trained readers who are not experts on this topic. | UWB LNA | In the 1960sWhere did the idea of 'transistorised wideband LNA' originate from? It seems that everything goes back to the 1960s when This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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