Computed paramagnetic properties for an E′ center produced from the twofold coordinated Si or Ge in silica

Garapon, J.; Favaro, Laurent; Poumellec, Bertrand

doi:10.1016/j.jnoncrysol.2006.10.045

Cited by 4 publications

(1 citation statement)

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“…A similar qualitative picture was observed in silica-germanate [6], but the 5.06-and 5.16-eV absorption maxima there were related to a vacancy "Ge-Ge" and a twofold-coordinated Ge 0 2 atom. Authors of later studies [7] held to the opinion that an oxygen vacancy should be absorbed at energies higher than 5 eV and a twofold-coordinated silicon atom @Si: possesses the absorption band at 5.2 eV. Thus, the origin of the maxima at 5.0 and 5.2 eV is not clearly understood.…”

Section: Introductionmentioning

confidence: 99%

Photosensitive defects in silica layers implanted with germanium ions

Zatsepin¹,

Fitting²,

Кортов³

et al. 2009

Journal of Non-Crystalline Solids

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a b s t r a c tGe-implanted silica layers have been investigated by high-power pulsed synchrotron-photoluminescence (PL), photoluminescence excitation spectroscopy (PLE), and optically stimulated electron emission (OSEE) with respect to association of excitation and absorption bands to respective emission bands and lifetimes of excited defect states. In this way singlet-singlet (4.35 eV) and triplet-singlet (3.18 eV) radiative transitions from excited states of oxygen-deficient centers (ODC) in Ge-doped silica glass are characterized by their absorption and emission bands as well as their lifetimes. The main channel for non-radiative relaxation of photoexcitation is electron emission by the OSEE effect. The OSEE shows non-radiative transitions of surface E 0 s and bulk E 0 -centers found with concentrations of (2.7-3.4) Â 10 12 cm À2 and (2-4) Â 10 16 cm À3, respectively.

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Section: Introductionmentioning

confidence: 99%