Computational study of graphene nanoribbon FETs for RF applications

Imperiale, Ilaria; Bonsignore, S.; Gnudi, A.; Gnani, Elena; Reggiani, Susanna; Baccarani, G.

doi:10.1109/iedm.2010.5703463

Cited by 22 publications

(23 citation statements)

References 9 publications

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“…This is reasonable since carrier transport in GNRs is degraded compared to that in gapless large-area graphene. Comparing our simulated f T data with the calculated cutoff frequencies for GNR MOSFETs from [25], where phonon scattering has been taken into account, and those from [21,22] is more difficult since in [21,22,25] transistors with much shorter gates have been considered. Figure 11 shows, however, that our cutoff frequencies are by trend lower than those simulated in [21,22,25].…”

Section: Simulation Results For Multiple-channel Gnr Mosfets With Intmentioning

confidence: 99%

Section: Simulated Transistor Structuresmentioning

confidence: 99%

“…This configuration has only a top gate and no interribbon gate and for its investigation 2D device simulations are sufficient. We note that such single-channel devices have been considered in most previous theoretical investigations of GNR MOSFETs [21][22][23][24][25][26][27]. Figure 5a shows the simulated transfer characteristics of the 50-nm gate single-channel N = 7 ac GNR MOSFET for a drain-source voltage V DS of 1 V. We define transistor's threshold voltage V Th as the gate-source voltage for which at V DS = 1 V a drain current of 10´7 Aˆw/L flows and the effective gate-source voltage V GS´e f f is related to the applied gate-source voltage V GS by V GS´e f f = V GS´VTh .…”

Section: Simulated Transistor Structuresmentioning

confidence: 99%

“…Steady-state quantum simulations based on the NEGF (nonequilibrium Green's function) approach assuming ballistic transport have been performed [21][22][23][24][25] and GNR MOSFET simulations taking edge scattering [26,27] and phonon scattering [25] into account have been conducted. Moreover, the RF performance of GNR MOSFETs has been investigated by numerical simulations [21,22,25] and analytical equations have been developed to calculate the steady-state behavior and the RF properties of GNR MOSFETs [28].…”

Section: Introductionmentioning

confidence: 99%

“…This has led to overly optimistic performance predictions such as unrealistically high simulated cutoff frequencies [21,22,25,28]. Moreover, most simulations have been performed using in-house tools not accessible by the community.…”

Section: Introductionmentioning

confidence: 99%

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Simulation of 50-nm Gate Graphene Nanoribbon Transistors

et al. 2016

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An approach to simulate the steady-state and small-signal behavior of GNR MOSFETs (graphene nanoribbon metal-semiconductor-oxide field-effect transistor) is presented. GNR material parameters and a method to account for the density of states of one-dimensional systems like GNRs are implemented in a commercial device simulator. This modified tool is used to calculate the current-voltage characteristics as well the cutoff frequency f T and the maximum frequency of oscillation f max of GNR MOSFETs. Exemplarily, we consider 50-nm gate GNR MOSFETs with N = 7 armchair GNR channels and examine two transistor configurations. The first configuration is a simplified MOSFET structure with a single GNR channel as usually studied by other groups. Furthermore, and for the first time in the literature, we study in detail a transistor structure with multiple parallel GNR channels and interribbon gates. It is shown that the calculated f T of GNR MOSFETs is significantly lower than that of GFETs (FET with gapless large-area graphene channel) with comparable gate length due to the mobility degradation in GNRs. On the other hand, GNR MOSFETs show much higher f max compared to experimental GFETs due the semiconducting nature of the GNR channels and the resulting better saturation of the drain current. Finally, it is shown that the gate control in FETs with multiple parallel GNR channels is improved while the cutoff frequency is degraded compared to single-channel GNR MOSFETs due to parasitic capacitances of the interribbon gates.

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Section: Simulation Results For Multiple-channel Gnr Mosfets With Intmentioning

confidence: 99%

Section: Simulated Transistor Structuresmentioning

confidence: 99%

Section: Simulated Transistor Structuresmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Simulation of 50-nm Gate Graphene Nanoribbon Transistors

et al. 2016

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Graphene Nanoribbons for Electronic Devices

et al. 2017

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Graphene nanoribbons show unique properties and have attracted a lot of attention in the recent past. Intensive theoretical and experimental studies on such nanostructures at both the fundamental and application-oriented levels have been performed. The present paper discusses the suitability of graphene nanoribbons devices for nanoelectronics and focuses on three specific device types -graphene nanoribbon MOSFETs, side-gate transistors, and three terminal junctions. It is shown that, on the one hand, experimental devices of each type of the three nanoribbon-based structures have been reported, that promising performance of these devices has been demonstrated and/or predicted, and that in part they possess functionalities not attainable with conventional semiconductor devices. On the other hand, it is emphasized that -in spite of the remarkable progress achieved during the past 10 yearsgraphene nanoribbon devices still face a lot of problems and that their prospects for future applications remain unclear.

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