Comprehensive study of Cp 2 Mg p-type doping of InP with MOVPE growth technique

Ezzedini, M.; Zeydi, I.; Kazzi, Salim El; Jiang, Shidong; Guo, Weiming; Sfaxi, L.; Mghaieth, Ridha; Maâref, H.; Merckling, Clément

doi:10.1016/j.jallcom.2015.08.095

Cited by 5 publications

(1 citation statement)

References 26 publications

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“…InP has been widely used for optical devices and high‐speed circuits . The second‐phase particles originating from nonstoichiometric melt growth usually act as the main factor affecting the quality of single crystals and the performance of optical and electronic devices.…”

Section: Introductionmentioning

confidence: 99%

Morphology of second‐phase particles and pores in InP substrates and their elimination by a rapid in situ P injection before crystal growth

Wang

Sun

Gao

et al. 2016

Phys. Status Solidi B

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In this paper, indium (In)‐rich second‐phase particles are observed in InP crystals, which is induced by the loss of phosphorus (P) during polycrystalline melting. Their characterizations reveal that the size of these In‐rich particles is 200 nm–20 µm. The dislocation structure surrounding the second‐phase particle and its formation is explained by the model of prismatic dislocation loop. The indium‐rich second‐phase particles could be eliminated under P‐rich condition by a rapid in situ P injection before crystal growth. Excessive P injection will lead to the formation of P pores with internal P deposits. The optimal injection value is given to eliminate the defects.

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Section: Introductionmentioning

confidence: 99%