Comprehensive analysis of blue diode laser-annealing of amorphous silicon films

Park, Minok; Vangelatos, Zacharias; Rho, Yoonsoo; Park, H.K.; Jang, Jin

doi:10.1016/j.tsf.2019.137779

Cited by 13 publications

(10 citation statements)

References 29 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Laser processing can access regimes that are not achievable via conventional thermal treatment. In particular, blue-diode laser 22 has been introduced in thin film annealing owing to its scalability, continuous wave characteristics, high optical power density per unit area or volume, low cost, and high photon energy (2.82 eV) 23,24 . Considering that the light absorption of PDA is in the range of blue-diode laser wavelength (440 nm) 15 , we inferred that blue-diode laser annealing (BLA) could be employed to efficiently anneal and improve PDA properties.…”

mentioning

confidence: 99%

Laser-induced graphitization of polydopamine leads to enhanced mechanical performance while preserving multifunctionality

et al. 2020

Self Cite

View full text Add to dashboard Cite

Polydopamine (PDA) is a simple and versatile conformal coating material that has been proposed for a variety of uses; however in practice its performance is often hindered by poor mechanical properties and high roughness. Here, we show that blue-diode laser annealing dramatically improves mechanical performance and reduces roughness of PDA coatings. Laser-annealed PDA (LAPDA) was shown to be >100-fold more scratch resistant than pristine PDA and even better than hard inorganic substrates, which we attribute to partial graphitization and covalent coupling between PDA subunits during annealing. Moreover, laser annealing provides these benefits while preserving other attractive properties of PDA, as demonstrated by the superior biofouling resistance of antifouling polymer-grafted LAPDA compared to PDA modified with the same polymer. Our work suggests that laser annealing may allow the use of PDA in mechanically demanding applications previously considered inaccessible, without sacrificing the functional versatility that is so characteristic of PDA.

show abstract

mentioning

confidence: 99%

Laser-induced graphitization of polydopamine leads to enhanced mechanical performance while preserving multifunctionality

et al. 2020

Self Cite

View full text Add to dashboard Cite

show abstract

“…[1][2][3][4][5] However, the use of LTPS by excimer laser annealing (ELA) of a-Si is limited only for mobile displays because of the mother glass size. On the other hand, continuous-wave (CW) laser annealing, in particular, blue laser annealing (BLA), is of increasing interest to replace ELA [6][7][8][9][10][11][12] because ELA cannot support G8 or G10.5/11 for LTPS TFT backplane. Note that the high capital investment of the manufacturing system and operating cost are needed for ELA system and its maintenance.…”

Section: Introductionmentioning

confidence: 99%

“…6,7 The range of laser energy density of ELA for LTPS is narrower than that of BLA because the ELA uses a pulse laser and BLA uses CW laser. 8 The a-Si layer by BLA is crystallized by the scanning of laser beam, and thus, grains are continuously grown from the previously grown Si seed. On the other hand, the a-Si by ELA is crystallized from the bottom substrate by forming nucleation seed and lateral grain growth.…”

Section: Introductionmentioning

confidence: 99%

“…This plays a significant advantage in producing larger lateral crystal grains (>10 μm) along the scanning direction 6,7 . The range of laser energy density of ELA for LTPS is narrower than that of BLA because the ELA uses a pulse laser and BLA uses CW laser 8 . The a‐Si layer by BLA is crystallized by the scanning of laser beam, and thus, grains are continuously grown from the previously grown Si seed.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Extremely foldable LTPS TFT backplane using blue laser annealing for low‐cost manufacturing of rollable and foldable AMOLED display

Lee

Kim

et al. 2021

J Soc Info Display

Self Cite

View full text Add to dashboard Cite

The crystallization of a-Si by blue laser annealing (BLA) is introduced for low-cost, high-resolution thin-film transistor (TFT) backplanes for foldable and rollable AMOLED displays. A big advantage of BLA is to provide low-temperature polycrystalline silicon (LTPS) with protrusion-free active channel. The BLA LTPS TFT manufactured on flexible substrate exhibits high field-effect mobility of 169 cm 2 /Vs, a smaller subthreshold voltage swing less than 201 mV/dec, and excellent electrical stability and mechanical robustness.blue laser annealing (BLA), flexible, foldable, low-temperature polycrystalline silicon (LTPS), thin-film transistor (TFT)

show abstract

“…However, ultra-low penetration depth of UV light to silicon limits the thickness of

-Si film, which can be processed with such an approach. Visible laser radiation (in particular, blue and green lasers operating in CW and pulsed mode [ 1 , 16 , 17 , 18 , 19 , 20 ]) was shown to increase the maximal processing thickness to 150–200 nm; however, this is still not enough to cover all applications. Noteworthy, penetration depth of near-IR radiation into Si, which has good transparency in this spectral range (comparing to UV and visible light), is high enough to drive crystallization inside rather thick

-Si films that are required for realistic applications and devices.…”

Section: Introductionmentioning

confidence: 99%

Large-Scale and Localized Laser Crystallization of Optically Thick Amorphous Silicon Films by Near-IR Femtosecond Pulses

et al. 2020

View full text Add to dashboard Cite

Amorphous silicon (α-Si) film present an inexpensive and promising material for optoelectronic and nanophotonic applications. Its basic optical and optoelectronic properties are known to be improved via phase transition from amorphous to polycrystalline phase. Infrared femtosecond laser radiation can be considered to be a promising nondestructive and facile way to drive uniform in-depth and lateral crystallization of α-Si films that are typically opaque in UV-visible spectral range. However, so far only a few studies reported on use of near-IR radiation for laser-induced crystallization of α-Si providing less information regarding optical properties of the resultant polycrystalline Si films demonstrating rather high surface roughness. The present work demonstrates efficient and gentle single-pass crystallization of α-Si films induced by their direct irradiation with near-IR femtosecond laser pulses coming at sub-MHz repetition rate. Comprehensive analysis of morphology and composition of laser-annealed films by atomic-force microscopy, optical, micro-Raman and energy-dispersive X-ray spectroscopy, as well as numerical modeling of optical spectra, confirmed efficient crystallization of α-Si and high-quality of the obtained films. Moreover, we highlight localized laser-induced crystallization of α-Si as a promising way for optical information encryption, anti-counterfeiting and fabrication of micro-optical elements.

show abstract

Comprehensive analysis of blue diode laser-annealing of amorphous silicon films

Cited by 13 publications

References 29 publications

Laser-induced graphitization of polydopamine leads to enhanced mechanical performance while preserving multifunctionality

Laser-induced graphitization of polydopamine leads to enhanced mechanical performance while preserving multifunctionality

Extremely foldable LTPS TFT backplane using blue laser annealing for low‐cost manufacturing of rollable and foldable AMOLED display

Large-Scale and Localized Laser Crystallization of Optically Thick Amorphous Silicon Films by Near-IR Femtosecond Pulses

Contact Info

Product

Resources

About