Composition, structure and annealing-induced phase separation in SiOx films produced by thermal evaporation of SiO in vacuum

Nesheva, D.; Bineva, I.; Levi, Z.; Aneva, Z.; Merdzhanova, Tsvetelina; Pivin, J.C.

doi:10.1016/s0042-207x(02)00266-x

Cited by 52 publications

(45 citation statements)

References 25 publications

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“…In [22] it is shown that, particularly, for SiO x films obtained by thermal evaporation of SiO powders in vacuum, the best fit is the curve experimentally obtained in [18]. Thus, in the present paper we used the latter curve from [18], and estimated also the amount of precipitated silicon.…”

Section: Nomentioning

confidence: 83%

Phase separation in SiO_x films annealed under enhanced hydrostatic pressure

Rudko

Maĭdanchuk

Indutnyy

et al. 2008

Physica Status Solidi (b)

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The effect of enhanced hydrostatic pressure (HP, (10–12) × 108 Pa) on thermally stimulated phase decomposition of silicon suboxide layers processed at 450–1000 °C was investigated by infrared spectroscopy and photoluminescence measurements. HP stimulates decomposition of non‐stoichiometric SiOx most efficiently at about 450 °C. In spite of enhanced SiOx decomposition, visible photoluminescence appears in HP‐treated samples at higher annealing temperatures in comparison to those annealed under ambient pressure (AP, 105 Pa). Contrary to that, application of HP results in essential enhancement of near‐infrared emission at lower annealing temperatures as compared to processing under AP. This can be related to pressure‐stimulated crystallization of Si inclusions. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Nomentioning

confidence: 83%

Phase separation in SiO_x films annealed under enhanced hydrostatic pressure

Rudko

Maĭdanchuk

Indutnyy

et al. 2008

Physica Status Solidi (b)

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“…The SiO evaporation was carried out from a tantalum crucible provided with a molybdenum cylindrical screen and thus evaporation in a quasi-closed volume takes place (Nesheva et al, 2003). The film thickness and deposition rate were monitored by a quartz microbalance system.…”

Section: Preparation Of Sio X Filmsmentioning

confidence: 99%

“…For Raman scattering, infra red and optical transmission measurements SiO x films with same compositions but with thickness of 0.2 and 1 μm were deposited on c-Si and quartz substrates. The film composition has been determined by means of Rutherford Back Scattering (Nesheva et al, 2003).…”

Section: Preparation Of Sio X Filmsmentioning

confidence: 99%

Silicon Oxide Films Containing Amorphous or Crystalline Silicon Nanodots for Device Applications

Nesheva¹,

Nedev²,

Curiel³

et al. 2012

Quantum Dots - A Variety of New Applications

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“…Details on the film deposition procedure can be found in Ref. [26]. The film composition has been determined by means of Rutherford back scattering [26].…”

Section: Introductionmentioning

confidence: 99%

“…[26]. The film composition has been determined by means of Rutherford back scattering [26]. All as-deposited layers were annealed at 250 ∘ C for 30 min in an Ar atmosphere to keep them stable at standard ambient conditions.…”

Section: Introductionmentioning

confidence: 99%

Application of Metal-Oxide-Semiconductor structures containing silicon nanocrystals in radiation dosimetry

et al. 2014

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This article makes a brief review of the most important results obtained by the authors and their collaborators during the last four years in the field of the development of metal-insulator-silicon structures with dielectric film containing silicon nanocrystals, which are suitable for applications in radiation dosimetry. The preparation of SiOx films is briefly discussed and the annealing conditions used for the growth of silicon nanocrystals are presented. A two-step annealing process for preparation of metal-oxide-semiconductor structures with three-layer gate dielectrics is described. Electron Microscopy investigations prove the Si nanocrystals growth, reveal the crystal spatial distribution in the gate dielectric and provide evidences for the formation of a top SiO 2 layer when applying the two-step annealing. Two types of MOS structures with three region gate dielectrics were fabricated and characterized by high frequency capacitance/conductancevoltage (C/G-V) measurements. The effect of gamma and ultraviolet radiation on the flatband voltage of preliminary charged metal-oxide-semiconductor structures is investigated and discussed.

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Composition, structure and annealing-induced phase separation in SiOx films produced by thermal evaporation of SiO in vacuum

Cited by 52 publications

References 25 publications

Phase separation in SiO_x films annealed under enhanced hydrostatic pressure

Phase separation in SiO_x films annealed under enhanced hydrostatic pressure

Silicon Oxide Films Containing Amorphous or Crystalline Silicon Nanodots for Device Applications

Application of Metal-Oxide-Semiconductor structures containing silicon nanocrystals in radiation dosimetry

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Composition, structure and annealing-induced phase separation in SiOx films produced by thermal evaporation of SiO in vacuum

Cited by 52 publications

References 25 publications

Phase separation in SiOx films annealed under enhanced hydrostatic pressure

Phase separation in SiOx films annealed under enhanced hydrostatic pressure

Silicon Oxide Films Containing Amorphous or Crystalline Silicon Nanodots for Device Applications

Application of Metal-Oxide-Semiconductor structures containing silicon nanocrystals in radiation dosimetry

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Phase separation in SiO_x films annealed under enhanced hydrostatic pressure

Phase separation in SiO_x films annealed under enhanced hydrostatic pressure