Phase separation in SiO<i><sub>x</sub></i> films annealed under enhanced hydrostatic pressure

Rudko, G. Yu.; Maĭdanchuk, I. Yu.; Indutnyy, I. Z.; Misiuk, A.; Gule, E. G.; Shepeliavyi, P. E.

doi:10.1002/pssb.200844049

Cited by 4 publications

(4 citation statements)

References 23 publications

(37 reference statements)

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“…Of course that presents only a very rough estimation but shows that only 10–20% of implanted Si atoms become visible as clusters. The rest is still dispersed in the SiO 2 matrix, better said SiO x matrix 21. We may describe this incomplete phase separation by the rate equation: with the stoichiometric factors 0 ≤ x 1 < x 2 ≤ 2 before ( x 1 ) and after ( x 2 ) ongoing phase separation.…”

Section: Resultsmentioning

confidence: 99%

Silicon nanocluster aggregation in SiO₂:Si layers

Fitting

Kourkoutis

Salh

et al. 2010

Physica Status Solidi (a)

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Energy‐filtered transmission electron microscopy (EFTEM) in combination with electron energy loss spectroscopy (EELS) and cathodoluminescence (CL) have been used to investigate Si+‐implanted amorphous silicon dioxide layers and the formation of Si nanoclusters. Therefore, amorphous, thermally grown SiO2 layers on Si substrate were implanted by Si+ ions with an energy of 150 keV and a dose of 5 × 1016 ions/cm2 leading to an atomic dopant fraction of about 4 at%. Afterwards a post‐implantation thermal annealing has been performed at temperatures Ta = 700–1300 °C, for 60 min in vacuum. This thermal annealing leads to Si cluster formation and a change of the SiOx matrix from about x = 1.923 to 1.929 connected with additional visible luminescence bands in the green‐yellow region. CL spectra in the near infrared (NIR) region indicate such Si aggregation by appearance of an additional band in extension of the common NBOHC band at 1.9 eV towards the NIR region. This band shifts with increasing annealing temperatures of the implanted sample to lower energies, probably, due to cluster growth and quantum confinement effects.

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Section: Resultsmentioning

confidence: 99%

Silicon nanocluster aggregation in SiO₂:Si layers

Fitting

Kourkoutis

Salh

et al. 2010

Physica Status Solidi (a)

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“…The rest is still dispersed in the SiO 2 matrix, better said SiO x matrix. We may describe this incomplete phase separation [16] by the rate equation:…”

Section: Resultsmentioning

confidence: 99%

“…As samples we have used amorphous, thermally grown SiO 2 layers, 500 nm thick, wet oxidized at 1100 °C on Si substrate. The layers are of microelectronic quality and doped by Si + ions with an energy of 150 keV and a dose of 5×10 16 ions/cm 2 leading to an atomic dopant fraction of about 4 at% at a mean depth of about 200 nm, see [3]. Afterwards a post-implantation thermal annealing has been performed at temperatures T a = 700-1300°C for 60 minutes in vacuum.…”

Section: Methodsmentioning

confidence: 99%

Silicon Cluster Aggregation in Silica Layers

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Kourkoutis

Salh

et al. 2009

SSP

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Scanning transmission electron microscopy (STEM) in combination with electron energy loss spectroscopy (EELS) and cathodoluminescence (CL) have been used to investigate Si+-implanted amorphous silicon dioxide layers and the formation of Si nanoclusters. The microstructure of the Si doped silica films was studied by energy filtered transmission electron microscopy (EFTEM) in a 200 kV FEI Tecnai F20 TEM. The samples were amorphous, thermally grown 500 nm SiO2 layers on Si substrate doped by Si+ ions with an energy of 150 keV up to an atomic dopant fraction of about 4 at%. A thermal post-annealing leads to formation of silicon clusters with sizes 1-5 nm and concentrations of about 1018 cm-3. Respective cathodoluminescence spectra in the near IR region indicate such structural changes by appearance of an additional band at 1.35 eV as well as additional emission bands in the visible green-yellow region.

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“…[8][9][10][11] It has been found that the PL intensity can be strongly affected by the high temperature ͑HT͒-high pressure ͑HP͒ treatment of the thermally grown oxygen-deficient as well as of stoichiometric silicon dioxide films. 12,13 Some information on the HT-HP induced effects in SiON can also be found in literature. 14,15 In this work, we report an extended research on the silicon oxynitride films with HT-HP treatment.…”

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confidence: 99%

Properties of Silicon Oxynitride Films Annealed under Enhanced Hydrostatic Pressure

Wong

Liu

et al. 2011

J. Electrochem. Soc.

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Silicon oxynitride films were deposited on Si by plasma-enhanced chemical vapor deposition using ammonia, nitrous oxide, and silane as precursors and subjected to preannealing in an oxygen atmosphere at 1100 or 1150°C under atmospheric pressure ͑10 5 Pa͒ for 5 h. The oxynitride films were then further processed at temperature up to 1100°C under argon hydrostatic pressure up to 1.2 GPa. The effects of high temperature-high hydrostatic pressure ͑HT-HP͒ treatment on the surface morphology, chemical bonding, crystallization effect, and photoluminescence ͑PL͒ of the SiON films were investigated. The PL intensity of silicon-rich oxynitride films is significantly enhanced by HT-HP processing. An explanation of this effect has been suggested.

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Phase separation in SiO_x films annealed under enhanced hydrostatic pressure

Cited by 4 publications

References 23 publications

Silicon nanocluster aggregation in SiO₂:Si layers

Silicon nanocluster aggregation in SiO₂:Si layers

Silicon Cluster Aggregation in Silica Layers

Properties of Silicon Oxynitride Films Annealed under Enhanced Hydrostatic Pressure

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Phase separation in SiOx films annealed under enhanced hydrostatic pressure

Cited by 4 publications

References 23 publications

Silicon nanocluster aggregation in SiO2:Si layers

Silicon nanocluster aggregation in SiO2:Si layers

Silicon Cluster Aggregation in Silica Layers

Properties of Silicon Oxynitride Films Annealed under Enhanced Hydrostatic Pressure

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Phase separation in SiO_x films annealed under enhanced hydrostatic pressure

Silicon nanocluster aggregation in SiO₂:Si layers

Silicon nanocluster aggregation in SiO₂:Si layers