Composition dependence of Au/In<i>x</i>Al1−<i>x</i>As Schottky barrier heights

Lin, C.L.; Chu, Paul K.; Kellner, Albert L.; Wieder, H. H.; Rezek, E. A.

doi:10.1063/1.97290

Cited by 51 publications

(14 citation statements)

References 14 publications

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“…The most promising barrier enhancement technique reported to date has been the growth of a thin layer of undoped latticematched InAlAs [16]- [22] on the InGaAs. InAlAs lattice matched to InP (E, = 1.47 V) has a high Schottky barrier of -0.8 V [23] and a thin layer grown epitaxially on InGaAs has the effect of raising both the electron and hole barriers. Both Organo-Metallic Chemical Vapor Deposition (OMCVD) grown 1161, [18]- [20] and MBE grown [17], [22] material has yielded devices with good performance characteristics.…”

Section: Introduction He Planar Metal-semiconductor-metal (Msm) Phmentioning

confidence: 99%

InGaAs metal-semiconductor-metal photodetectors for long wavelength optical communications

Soole

Schumacher²

1991

IEEE J. Quantum Electron.

327

117

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Section: Introduction He Planar Metal-semiconductor-metal (Msm) Phmentioning

confidence: 99%

InGaAs metal-semiconductor-metal photodetectors for long wavelength optical communications

Soole

Schumacher²

1991

IEEE J. Quantum Electron.

327

117

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“…Recently, Lin et al 3 have reported that b of Au contact increased with Al content of In 1Ϫx Al x As. For In 0.52 Al 0.48 As, the use of a contact material which reacts with the semiconductor alloy at the interface to exchange the In atoms for Al atoms could also be used to enhance the Schottky barrier height due to the increase of the Al composition immediately adjacent to the semiconductor.…”

mentioning

confidence: 99%

PdAl Schottky contact to In0.52Al0.48As grown by metalorganic chemical vapor deposition

Lin

Chang

Pan

et al. 1995

Applied Physics Letters

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␤-PdAl was studied as a Schottky contact to metalorganic chemical vapor deposition grown In 0.52 Al 0.48 As. Intermetallic alloy ␤-PdAl was chosen in order to utilize the Al-In exchange reaction which may occur between PdAl and In 0.52 Al 0.48 As, which would result in an enhanced Schottky barrier height. I-V, C-V, and deep level transient spectroscopy ͑DLTS͒ were used to determine the contact characteristics. The contact barrier height ( b ) was measured by I-V and C-V methods after different annealing conditions, and good agreement between I-V and C-V results were obtained. The largest b value is 0.67 eV from I-V measurement ͑0.69 eV from C-V͒ after the diode was annealed at 450°C for 1 min. DLTS measurements were carried out to examine the effect of deep traps in the In 0.52 Al 0.48 As layer. Two deep levels were found, but the concentrations are lower than the intrinsic donor concentration obtained from the Hall method. As, the use of a contact material which reacts with the semiconductor alloy at the interface to exchange the In atoms for Al atoms could also be used to enhance the Schottky barrier height due to the increase of the Al composition immediately adjacent to the semiconductor. Chen et al. 4 have recently found that the Schottky barrier of ␤-NiAl/GaAs can be enhanced by rapid thermal annealing ͑RTA͒ at high temperatures. This enhancement is due to a Ga-Al exchange reaction to form a thin layer of ͑Ga,Al͒As at the interface. Therefore, it is desirable to seek a contact material which may react with the alloy semiconductor, In 0.52 Al 0.48 As, to form a thin layer of alloy with higher Al concentration, leading to an increased Schottky barrier height.␤-PdAl was selected as a contact material for this possible Al-In exchange reaction after a review of the phase equilibria of several transition metal In-Al-As systems. Both ␤-NiAl and ␤-PdAl have the same ordered bcc ͑or CsCl͒ structure. Although the phase equilibria of PdAlPdIn-InAs-AlAs are not known, it is possible that a reciprocal system may exist similarly to that of NiAl-NiGaGaAs-AlAs. It is the existence of this reciprocal system which leads to an enhanced Schottky barrier height of the ␤-NiAl/GaAs contacts after RTA at high temperatures. The purpose of present study is to determine the Schottky contact characteristics of ␤-PdAl/In 0.52 Al 0.48 As. Barrier heights of annealed contacts were measured at room temperature using the current-voltage ͑I-V͒ and capacitance-voltage ͑C-V͒ methods. The effect of deep traps in the In 0.52 Al 0.48 As layer was examined by using deep level transient spectroscopy ͑DLTS͒.Schottky diodes prepared for the electrical measurements have a basic structure of PdAl/In 0.52 Al 0.48 As/InP/ AuGe. The In 0.52 Al 0.48 As epitaxial layer was grown by a metalorganic chemical vapor deposition ͑MOCVD͒ method using S-doped InP substrate and TMA ͑trimethyl-aluminum͒, TMI ͑trimethyl-indium͒, high purity arsine, and TBP ͑tertiary-butylphosphine͒ as source materials. 5 An undoped In 0.52 Al 0.48 As layer of 0.63 m thick was grown a...

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“…Researches on this ternary compound semiconductor were focused on In 0.52 Al 0.48 As whose lattice constant is matched to InP as well as In 0.53 Ga 0.47 As materials [4,5]. The detailed characteristics of these In 0.52 Al 0.48 As Schottky diodes with different metals were also extensively studied [5][6][7]. However, little has been published regarding the In 0.52 Al 0.48 As material system for microsensor application.…”

Section: Introductionmentioning

confidence: 98%

Temperature-dependent hydrogen sensing characteristics of a new Pt/InAlAs Schottky diode-type sensor

Hung¹,

Tsai²,

Chen³

et al. 2008

Sensors and Actuators B: Chemical

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Composition dependence of Au/InxAl1−xAs Schottky barrier heights

Cited by 51 publications

References 14 publications

InGaAs metal-semiconductor-metal photodetectors for long wavelength optical communications

InGaAs metal-semiconductor-metal photodetectors for long wavelength optical communications

PdAl Schottky contact to In0.52Al0.48As grown by metalorganic chemical vapor deposition

Temperature-dependent hydrogen sensing characteristics of a new Pt/InAlAs Schottky diode-type sensor

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