Composition and hardness of chemically vapour-deposited silicon carbide with various microstructures

Kim, Young‐Wook; Park, S. W.; Lee, J. G.

doi:10.1007/bf00291806

Cited by 10 publications

(24 citation statements)

References 11 publications

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“…[4,5] For example, it is reported that films with a (111) preferred orientation have stronger Vickers hardness than films with a (220) preferred orientation. [4,6] Film structures such as grain size, orientation, and surface morphology depend on operating conditions, e.g., temperature and precursor concentration.…”

Section: Introductionmentioning

confidence: 99%

Preferred Orientation of Chemical Vapor Deposited Polycrystalline Silicon Carbide Films

Kajikawa¹,

Noda

Komiyama³

2002

Chem. Vap. Deposition

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We investigated the mechanism that determines the preferred orientation of polycrystalline silicon carbide (SiC) films prepared by CVD from a mixture of dichlorodimethylsilane (DDS) and He. X-ray diffraction (XRD) measurements indicated that the major growth direction is either the (220) or the (111) plane. We developed a numerical model for predicting the preferred orientation, assuming Langmuir-type adsorption and reaction of the growth species. This model suggests that the (111) plane appears under reaction-limited deposition, while the (220) plane appears under adsorption-limited deposition. Our experimental and numerical results show good qualitative agreement with experimental results for films prepared from methyltrichlorosilane (MTS) and H 2 .

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Section: Introductionmentioning

confidence: 99%

Preferred Orientation of Chemical Vapor Deposited Polycrystalline Silicon Carbide Films

Kajikawa¹,

Noda

Komiyama³

2002

Chem. Vap. Deposition

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“…Experimental results from Ref. 44 provide some support for this hypothesis. The present work demonstrates that the high-resolution and high-throughput thermodynamic calculation approach is a predictive and economical approach to gain insights into the influence of deposition conditions on vapor processing.…”

Section: Discussionmentioning

confidence: 80%

Computational thermodynamic study of SiC chemical vapor deposition from MTS‐H₂*

et al. 2021

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Silicon carbide (SiC) attracts extensive attention due to its attractive properties, such as a large bandgap, excellent chemical stability, high-temperature stability, and resistance to heat, radiation, corrosion, and thermal shock. [1][2][3][4][5][6] Thus, it is widely used within functional and structural materials in high temperature, aerospace, nuclear energy, and other applications. [5][6][7][8][9] Chemical vapor deposition (CVD) and infiltration (CVI) are among the most feasible and widely studied SiC fabrication approaches because of their ability to handle complex geometry, flexible processing conditions, and the high purity, high density, and excellent crystalline morphology of the prepared SiC. [10][11][12][13][14][15][16][17][18][19][20] Methyltrichlorosilane (CH 3 SiCl 3 , MTS) is the most commonly used gas precursor for CVD and CVI of SiC [15][16][17][18][21][22][23][24] owing to its equivalent ratio of silicon (Si) to carbon (C) and the wide range of allowable deposition temperatures. Hydrogen (H 2 ) is frequently used as the carrier and diluent gas with MTS, both delivering the MTS precursor to the reactor and regulating the concentration of mixed gas precursors. 12

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“…Further, an O 1s peak at 534.8 eV, which is close to the energy levels of 532.6 eV (corresponding to OASi bonds in silicon oxide/silicon oxycarbide) and 533.8 eV (due to OAC bonds [9]) is observed in the XPS spectra of O 1s core level peaks. From these results, we conclude that the composition at the surface of the unirradiated CVD-SiC sample comprises not SiC but silicon oxide, which is formed easily upon SiC reacting with O 2 in air [8][9][10][11][12]. In Fig.…”

Section: Methodsmentioning

confidence: 98%

Dynamic measurements of radiation-induced electrical-property modifications in CVD-SiC under fast-neutron irradiation

Tsuchiya¹,

Shikama²,

Nagata³

et al. 2014

Journal of Nuclear Materials

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Composition and hardness of chemically vapour-deposited silicon carbide with various microstructures

Cited by 10 publications

References 11 publications

Preferred Orientation of Chemical Vapor Deposited Polycrystalline Silicon Carbide Films

Preferred Orientation of Chemical Vapor Deposited Polycrystalline Silicon Carbide Films

Computational thermodynamic study of SiC chemical vapor deposition from MTS‐H₂*

Dynamic measurements of radiation-induced electrical-property modifications in CVD-SiC under fast-neutron irradiation

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Composition and hardness of chemically vapour-deposited silicon carbide with various microstructures

Cited by 10 publications

References 11 publications

Preferred Orientation of Chemical Vapor Deposited Polycrystalline Silicon Carbide Films

Preferred Orientation of Chemical Vapor Deposited Polycrystalline Silicon Carbide Films

Computational thermodynamic study of SiC chemical vapor deposition from MTS‐H2*

Dynamic measurements of radiation-induced electrical-property modifications in CVD-SiC under fast-neutron irradiation

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Computational thermodynamic study of SiC chemical vapor deposition from MTS‐H₂*