Preferred Orientation of Chemical Vapor Deposited Polycrystalline Silicon Carbide Films

Abstract

We investigated the mechanism that determines the preferred orientation of polycrystalline silicon carbide (SiC) films prepared by CVD from a mixture of dichlorodimethylsilane (DDS) and He. X-ray diffraction (XRD) measurements indicated that the major growth direction is either the (220) or the (111) plane. We developed a numerical model for predicting the preferred orientation, assuming Langmuir-type adsorption and reaction of the growth species. This model suggests that the (111) plane appears under reaction-limited deposition, while the (220) plane appears under adsorption-limited deposition. Our experimental and numerical results show good qualitative agreement with experimental results for films prepared from methyltrichlorosilane (MTS) and H 2 .

Growth and formation mechanism of c-oriented ZnO nanorod arrays deposited on glass

“…The diffraction intensity of the (0 0 2) peak surpasses others, which demonstrates the c-oriented nature of the as-grown array. The degree of the orientation can be illustrated by the relative texture coefficient [9], which is given by…”

“…2(b) indicates the existence of a ZnO wetting layer prior to the growth of the ZnO nanorod. By analogy to the growth of thin films, it suggests that the StranskiKrastanov (SK) growth mode is the most possible case [9]. The SK growth is an intermediate combination of the layer (two-dimensional: 2D) and island (three-dimensional: 3D) growth.…”

“…It is well known that the crystallographic orientation and faceted structure of crystal sample depend on the supply of the sources, the adsorption of the reactants onto the growth sites, and the diffusion of the adsorbates on the substrate surface [9]. On the other hand, for stoichiometric ZnO, the growth in [0 0 1] direction usually overwhelms other directions because (0 0 1) atomic planes are close-packed with low surface energy [11].…”

Crystalline texture in hafnium diboride thin films grown by chemical vapor deposition

“…For physical vapor deposition, the effects of the most important mechanisms such as surface and bulk diffusion have been reviewed [24][25][26]. In CVD, the gas phase or surface reactions introduce mechanisms that are specific to the growth chemistry and are significantly different from system to system [27,28]. The present data are insufficient to provide a complete understanding of the texture development in HfB 2 films grown by CVD from the single-source precursor Hf(BH 4 ) 4 , but some general conclusions about the mechanisms can be drawn from the data.…”

Oriented growth of ZnO nanostructures on different substrates via a hydrothermal method

“…The diffraction intensity of the (0 0 2) surpasses the others, which illustrates the c-oriented nature of the as grown array. The degree of the orientation can be illustrated by the relative texture coefficient [30], which is given by where TC 0 0 0 2 is the relative texture coefficient of diffraction peaks (0 0 0 2) over (1 01 0), I 0 0 0 2 and I 1 01 0 are the measured diffraction intensities due to (0 0 0 2) and (1 01 0) planes, respectively, and I 0 0 0 2 and I 1 01 0 are the corresponding values of standard JCPDS card measured from randomly oriented powder samples. For materials with random crystallographic orientations, the texture coefficient is 0.5, while the value for our sample is 0.56, which shows a preferential orientation along the c-axis for the ZnO nanorod array.…”