Composite ULP diode fabrication, modelling and applications in multi-Vth FD SOI CMOS technology

Optimization of the area/robustness/speed trade-off in a 28 nm FDSOI latch based on ULP diodes

“…However, this results in very low current in 1'orward bias mode. The ultra low power diode proposed in [6] is ап architecture that allows to strongly reduce the reverse leakage current while maintaining similar 1'orward current drive capability. It is obtained Ьу the combination of ап NМOS and ап PMOS as shown оп the left of Fig.…”

“…As the reverse bias voltage increases, the current starts to increase in the diode due to the positive value of the drain-to-source voltage (Vds) of the PMOS and the NМOS. The current increases ир to а maximum value (Jd,peak) then decreases drastically because the gate-to-source voltage becomes highly negative (Vgs rv -Vd/2) [6]. The peak current is proportional in first approximation to the transistor subthreshold current at Vgs = о and thus exponentially de pendent оп -'-"th' We thus selected LVT transistors to reach sufficient Id,peak for the ULP diode.…”

“…Therefore, ап alternative architecture сап Ье investigated. With the use of ULP diodes, it is possibIe to create а ULP latch with ultra low leakage power [5] [6]. But what about the robustness of this design in nanometer CMOS?…”

Monostable-Bistable Transition Logic Elements: Threshold Logic vs. Boolean Logic Comparison

“…Secondly, the threshold voltage of transistors on a partially depleted CMOS SOI technology can be varied by applying a body bias, since the body is naturally isolated. Finally, with a fully depleted SOI CMOS technology, MTCMOS process is easily obtained without extra-mask nor process complexity, simply by adding, removing or exchanging the channel doping masks between NMOS and PMOS transistors [7]. Therefore, an SOI technology is used for simulations in the next sections.…”

Ultra-Low Power Flip-Flops for MTCMOS Circuits

“…This leakage further increases as the diode is further reverse biased due to higher drain-to-source voltage and backgate effect. We propose a new diode structure (ULPD for Ultra-Low Power diode) [4] combining an n and a pMOSFET ( Fig.1) that strongly reduces reverse current. When the ULPD is reverse biased, the n and pMOSFET sources appear connected together and both transistors operate with negative V gs .…”