Complementary JFETs Integrated into the Microwave Complementary Bipolar Double Self-Aligned Technology

Drozdov, D.G.; Prokopenko, N.; Savchenko, E.M.; Grushin, Andrey I.; Dukanov, Pavel A.

doi:10.1109/ewdts.2019.8884448

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Complementary JFETs Integrated into the Microwave Complementary Bipolar Double Self-Aligned Technology

Cited by 3 publications

References 7 publications

Comparison of Complementary JFET Parameters on Technological Processes of JSC "Integral" (Minsk) and JSC "SPE "Pulsar" (Moscow) at Low Temperatures

Comparison of Complementary JFET Parameters on Technological Processes of JSC "Integral" (Minsk) and JSC "SPE "Pulsar" (Moscow) at Low Temperatures

Low-Noise Si-JFETs Enhanced by Split-Channel Concept

A High Speed JFET Operational Amplifier Based on Complementary Bipolar Process

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