Low leakage diodes are necessary in order to manufacture high-quality variable capacitance diodes (varicaps), which are used in voltage-controlled oscillators. Junction leakage current affects the single sideband noise of the oscillator by up-conversion of 1/f and shot noise (Chan et al. in IEEE Trans Electron Devices 54(9):2570–2573, 2007, https://doi.org/10.1109/TED.2007.903201). Several sources show higher leakage current for RTP compared to furnace anneal (Lunnon et al. in J Electrochem Soc 132(10):2473, 1985, https://doi.org/10.1149/1.2113602, Gramenova et al. in J Electrochem Soc 146(1):359, 1999, https://doi.org/10.1149/1.1391613, Mikoshiba et al. in Jpn J Appl Phys, 1986, https://doi.org/10.1143/jjap.25.l631). In our experiments, we found lower leakage currents for RTP compared to furnace annealing. We present results from annealing experiments where we compare three annealing conditions with and without oxidizing annealing conditions.
Graphical abstract
A new field-effect transistor based transducer concept is presented, for measuring both, liquid and gaseous media. It uses a Faraday cup with a floating electrode inside, which is connected to the gate of a MOS like transistor. The SOI based technological realization allows a new degree of freedom for more flexible measurements as compared to conventional FET based transducers. Potentiometric measurements are presented. Additionally the SOI technology allows simple packaging
The radiation hardness of an alternative field oxide technology has been investigated. The discussed field oxide is built up of a double layer consisting d a thick, chemically deposited and doped Si02 layer on top of a thin, thermally grown Si02 film. The influence of the dopants of the CVD oxide as well as the annealing temperature on the radiation hardness of the field oxide are examined in order to find optimized process parameters. Compared to thermal oxides, a 2.5 order of magnitude improvement in radiation tolerance i s obsetved with regard to the threshold voltage shift.
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