Comparison of annealing quality after 3e15/cm2 50 keV BF2+ implant between rapid thermal annealing and furnace annealing

Abstract

Low leakage diodes are necessary in order to manufacture high-quality variable capacitance diodes (varicaps), which are used in voltage-controlled oscillators. Junction leakage current affects the single sideband noise of the oscillator by up-conversion of 1/f and shot noise (Chan et al. in IEEE Trans Electron Devices 54(9):2570–2573, 2007, https://doi.org/10.1109/TED.2007.903201). Several sources show higher leakage current for RTP compared to furnace anneal (Lunnon et al. in J Electrochem Soc 132(10):2473, 1985, https://doi.org/10.1149/1.2113602, Gramenova et al. in J Electrochem Soc 146(1):359, 1999, https://doi.org/10.1149/1.1391613, Mikoshiba et al. in Jpn J Appl Phys, 1986, https://doi.org/10.1143/jjap.25.l631). In our experiments, we found lower leakage currents for RTP compared to furnace annealing. We present results from annealing experiments where we compare three annealing conditions with and without oxidizing annealing conditions. Graphical abstract

Atomic Diffusion Mechanism in BF2+ Implanted and Annealed n-Fz Si junction using Analytical Approach: Comparison with 2-D TCAD Process Simulation Result

“…The device and process parameters (XJ-Junction depth, tox-oxide thickness, WN-Device depth) are shown in Figure 1. The critical dose for amorphization in the BF2 + implantation is 1x10 15 ion/cm 2 [3]. Ion implantation introduces lattice defects along its path in the crystal lattice, leads to disrupts the crystallinity of the Si surface of the DSSSD.…”

“…In this paper, we have shown atomic transport and electrical activation behaviors of BF2 + molecules/dopants just after ion implantation and after low/moderate/high temperature annealing in the n-Fz bulk of the DSSSD for the R3B Silicon Tracker. The results are shown using 2-D process TCAD (Technology Computer Aided Design) simulation [11][12][13][14][15][16].…”