Comparison of Complementary JFET Parameters on Technological Processes of JSC "Integral" (Minsk) and JSC "SPE "Pulsar" (Moscow) at Low Temperatures

Дворников, О. В.; Dziatlau, V. L.; Tchekhovski, Vladimir A.; Prokopenko, N.; Drozdov, D.G.; Savchenko, E.M.

doi:10.1109/mwent47943.2020.9067463

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Cited by 5 publications

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“…The use of complementary JFETs, which are mastered in the framework of a number of modern technological processes [10,11], provides a low noise level and increased resistance of analog microcircuits to the effects of penetrating radiation. For many problems of analog circuitry, floating FDSs are promising not only on silicon JFETs, but also on JFETs based on SiC, GaN, GaAs transistors [12].…”

Section: Introductionmentioning

confidence: 99%

Basic Modifications of "Floating" Differential Stages Based on Complementary Field-Effect Transistors with a Control p-n Junction

Chumakov¹,

Prokopenko²,

Pakhomov³

et al. 2021

Preprint

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The circuitry of the summarized "floating" differential stages (FDS) based on complementary field-effect transistors with a control p-n junction (CJFET), intended for use in low-noise analog microcircuits, for example, operational amplifiers. The results of modeling the flow characteristics of one of the CJFET FDSs in the LTSpice XVII environment at low temperatures (down to -197 0С) and exposure to a neutron flux in the range of 1e13 ÷ 1e15 n / cm2 are presented.

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Section: Introductionmentioning

confidence: 99%