Complementary doping of van der Waals materials through controlled intercalation for monolithically integrated electronics

Ke, Ming; Nguyen, Huu Duy; Fan, Hang; Li, Man; Wu, Huan; Hu, Yongjie

doi:10.1007/s12274-020-2634-y

Cited by 10 publications

(7 citation statements)

References 82 publications

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“…developed both p‐type and n‐type transistors as well as electrical diodes. [ 106 ] The intercalation‐based lateral heterostructure offered a new pathway to the construction of functional 2D electronic devices with unique material interfaces.…”

Section: Physical and Chemical Property Modulation With Intercalationmentioning

confidence: 99%

Layered Intercalation Materials

et al. 2021

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2D layered materials typically feature strong in‐plane covalent chemical bonding within each atomic layer and weak out‐of‐plane van der Waals (vdW) interactions between adjacent layers. The non‐bonding nature between neighboring layers naturally results in a vdW gap, in which various foreign species may be inserted without breaking the in‐plane covalent bonds. By tailoring the composition, size, structure, and electronic properties of the intercalated guest species and the hosting layered materials, an expansive family of layered intercalation materials may be produced with highly variable compositional and structural features as well as widely tunable physical/chemical properties, invoking unprecedented opportunities in fundamental studies of property modulation and potential applications in diverse technologies, including electronics, optics, superconductors, thermoelectrics, catalysis, and energy storage. Here, the principles and protocols for various intercalation methods, including wet chemical intercalation, gas‐phase intercalation, electrochemical intercalation, and ion‐exchange intercalation, are comprehensively reviewed and how the intercalated species alter the crystal structure and the interlayer coupling of the host 2D layered materials, introducing unusual physical and chemical properties and enabling devices with superior performance or unique functions, is discussed. To conclude, a brief summary on future research opportunities and emerging challenges in the layered intercalation materials is given.

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Section: Physical and Chemical Property Modulation With Intercalationmentioning

confidence: 99%

Layered Intercalation Materials

et al. 2021

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“…For the intercalation of Cu 2+ cations, the BP Fermi level moved to the conduction band, realizing n‐type doping. [ 112 ]…”

Section: Bandgap Modulationmentioning

confidence: 99%

“…a) Energy band and doping effect diagram of BP FET; Reproduced with permission. [ 112 ] Copyright 2020, Tsinghua University Press and Springer‐Verlag GmbH Germany, part of Springer Nature. b) Energy band and doping effect diagram B‐BP FET; Reproduced with permission.…”

Section: Bandgap Modulationmentioning

confidence: 99%

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Bandgap Modulation in BP Field Effect Transistor and Its Applications

Zhang

Sun

et al. 2021

Adv Elect Materials

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Black phosphorus (BP), an emerging crystal material with prominent features such as high carrier mobility and easily modulated band structure, fills the deficiencies of graphene and transition metal dichalcogenides. It has become a key component of 2D materials. The biggest advantage of BP is reflected in the fixed and direct energy band structure. Starting from the introduction of BP's crystal structure, this work reviews the important role of doping strategies, van der Waals heterojunction, and contact engineering thickness control technology in bandgap adjustment and performance improvement of BP field effect transistors. The focus is to put on the enhanced performance of electronic devices in high mobility, fast response speed, wide spectral range, low power consumption, and stronger stability caused by bandgap modulation. These methods cover from advanced technology to a wide range of electrical and optoelectronic progress in recent years, showing a booming development trend. In addition, considering the breakthrough of BP in new physics and application prospects, the potential applications of the active field are highlighted in this work.

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“…Experimentally, ionic intercalations have been developed to complementarily dope vdW materials for diode devices, providing a potential method to realize tunneling photodiodes based on borophene/C 4 N 4 (B/C 4 N 4 ) vdW heterojunctions. 30 In this study, based on density functional theory (DFT), we built B/C 4 N 4 vdW heterojunctions by stacking monolayer borophene and C 4 N 4 vertically and further decorating them with Li-ions. The electronic properties of free-standing borophene and C 4 N 4 monolayers, including the separation of hole-electron pairs (Dr), work function (DF), and effective mass of carriers (Dm*), are rationally modulated by the combination of vertical stacking and Li-ion adsorption.…”

Section: Introductionmentioning

confidence: 99%