2009
DOI: 10.1088/0953-8984/21/44/443001
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Competing interactions in molecular adsorption: NH3on Si(001)

Abstract: Ammonia is a good model system for the study of co-adsorption interactions, including indirect effects such as charge and strain-induced local effects on adsorption sites, and direct interactions such as hydrogen bonding. On the Si(001) surface, it adsorbs molecularly, via a dative bond from the N atom to the down atom of a buckled dimer, and is therefore very sensitive to the local charge conditions. It will then dissociate into -H and -NH(2) groups, adsorbed on the dangling bonds of the Si dimers. The NH(2) … Show more

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Cited by 25 publications
(32 citation statements)
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“…Also listed are hydrogen bond length between an electronegative O (or N) atom and proton in two nearest neighboring adsorbates. d α , d βm and d βp indicate the mean length and dispersion of H-bonds for relevant Structures (3,4,7,8), (2,4) and (6,8) …”
Section: Derivation and Origin Of The Attractive Adsorbate-adsorbate mentioning
confidence: 99%
See 1 more Smart Citation
“…Also listed are hydrogen bond length between an electronegative O (or N) atom and proton in two nearest neighboring adsorbates. d α , d βm and d βp indicate the mean length and dispersion of H-bonds for relevant Structures (3,4,7,8), (2,4) and (6,8) …”
Section: Derivation and Origin Of The Attractive Adsorbate-adsorbate mentioning
confidence: 99%
“…Taking the adsorption of organic molecules for example, several different origins of adsorbateadsorbate interactions (AAIs) have been identified [1,2]. They include direct adsorbate-adsorbate steric repulsion, dipole-dipole interaction and hydrogen bonding.…”
Section: Introductionmentioning
confidence: 99%
“…Several monolayer formation processes have been developed for N-containing compounds on silicon surfaces leading to the formation of Si-N linkages. For example, ammonia reacts with Si(100) surface in ultra-high vacuum (UHV) conditions [8][9] by forming Si-NH 2 and…”
Section: Introductionmentioning
confidence: 99%
“…[10][11][12] A number of studies focus on the surface reactions of clean silicon surfaces with amines, including dimethylamine (DMA), trimethylamine (TMA), [13][14][15][16] triethylamine(TEA), 17 aniline, 18 and aryl amines [19][20] , performed in UHV conditions. However, UHV surface preparation and interface processing are time-consuming and expensive, and for most chemistries described to date, the formation of Si-N bonds is accompanied by the processes leading to other surface species (such as Si-H).…”
Section: Introductionmentioning
confidence: 99%
“…As the flipping motion of silicon dimer is intrinsic to Si(100) that operates even in the absence of adsorbates, the effect of this motion on dissociation dynamics, as we describe in this work, should be general for a wide class of molecules. [14][15][16][17][18][19][20] Central to our current work is the effect of flipping silicon dimer on the barrier height of a single dissociative adsorption reaction on Si(100), rather than its effect on the branching of multiple reaction pathways examined in early work. 16,19 We also examine how the dissociative adsorption is altered on a heterodimer in a Si(100) surface.…”
Section: Introductionmentioning
confidence: 99%