Compendium of Total Ionizing Dose Results and Displacement Damage Results for Candidate Spacecraft Electronics for NASA

Cochran, Donna J.; Kniffm, S.D.; Büchner, S.; LaBel, Kenneth A.; O'Bryan, Martha V.; Ladbury, Ray; Sanders, Anthony B.; Hawkins, D.K.; Poivey, C.; Oldham, T.R.; Kim, Hak; Irwin, T.; Friendlich, M.; Dung-phan, Anthony; Carts, M.A.; Berg, Melanie D.; Seidleck, C.M.; Forney, James D.

doi:10.1109/redw.2006.295461

Cited by 11 publications

(4 citation statements)

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“…The detailed test results for two device types, LM139 and LM124, that were particularly sensitive to dose rate effects are presented in Figure 1 and Figure 2. As expected from previous reports [1][2][3][4][5][6], many devices exhibited some degree of sensitivity to dose rate effects. In most of cases, however, this sensitivity was not significant enough to have major practical impact for many typical spacecraft applications.…”

Section: Methodssupporting

confidence: 85%

Total Ionizing Dose and Dose Rate Effects in Candidate Spacecraft Electronic Devices

Bogorad

Likar

Moyer

et al. 2008

2008 IEEE Radiation Effects Data Workshop

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Section: Methodssupporting

confidence: 85%

Total Ionizing Dose and Dose Rate Effects in Candidate Spacecraft Electronic Devices

Bogorad

Likar

Moyer

et al. 2008

2008 IEEE Radiation Effects Data Workshop

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“…HE classic bipolar comparators LM111 and LM119 have been widely used in space applications and have been the subjects of many radiation studies [1]- [10]. One concern for the space community is how the products perform under ionizing radiation at relatively low dose rates [11].…”

Section: Introductionmentioning

confidence: 99%

“…The LM111 has been used extensively as a test vehicle for low dose rate studies. It has been shown that the radiation performance of the LM111 can depend upon manufacturer [1] [2], wafer processing [3], operating conditions [4], operating temperature during irradiation [5], thermal cycling prior to irradiation [6] and dose rate [1]- [3], [5], [7]- [10]. The LM119 did not show a thermal cycling dependence [6] but some versions may have dose rate dependence [10].…”

Section: Introductionmentioning

confidence: 99%

Low dose rate test results of national semiconductor's ELDRS-free bipolar comparators LM111 and LM119

Kruckmeyer

McGee

Brown³

et al. 2009

2009 European Conference on Radiation and Its Effects on Components and Systems

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Many bipolar comparators have been shown to exhibit enhanced low dose rate sensitivity (ELDRS), where a product may have worse total ionizing dose (TID) performance when exposed to ionizing radiation at a relatively low dose rate than when exposed at a higher dose rate. This can be a significant issue for the space community where the application dose rate is typically much lower than the dose rates used to test and qualify products to a given radiation level.A characterization method has been defined in MIL-STD-883 to determine if a product could be considered to exhibit ELDRS. National Semiconductor has released new versions of the classic, and extensively studied, bipolar comparators, LM111 and LM119.These products have gone through the ELDRS characterization defined in MIL-STD-883, have been found not to exhibit ELDRS and have been rated to 100 krad(Si). The data are presented here.Index Terms-Bipolar comparators, enhanced low dose rate sensitivity (ELDRS), LM111, LM119

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“…[10]- [13] It should be noted that the intent of this study is to provide a general early assessment of dose for the purpose of characterization of radiation tolerance of novel optoelectronic materials and device architectures. Prior to use of a component in a mission, the specific mission dose (accounting for particular anticipated shielding) would be carefully assessed to calculate the fluence required to achieve the specific orbit duration called for [7], [8], [14], [15]. It is general knowledge that monoenergetic, normally-incident proton ground-testing cannot match both the displacement damage and total ionizing dose in orbit.…”

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confidence: 99%

Orbital Equivalence of Terrestrial Radiation Tolerance Experiments

Logan

Short

Webster

et al. 2020

IEEE Trans. Nucl. Sci.

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High energy (>40 MeV) protons are commonly used to characterize space electronics' radiation tolerance against damage caused by energy transfer to the nuclei and electrons of semiconductor materials while in orbit. While practically useful, these experiments are unrepresentative in terms of particle type and energy spectra, which results in disproportionate amounts of displacement damage and total ionizing dose. We compare these damages to those realized by bulk semiconductors used in optoelectronics in common low, medium, and high Earth orbits by calculating the duration in orbit required to achieve equivalent nuclear and electronic energy deposition. We conduct this analysis as a function of test proton energy, material, material thickness, and shielding thickness. The ratio of nuclear to electronic orbit duration, a value which would approach unity in an ideal radiation tolerance test, is found to exceed unity in the majority of cases but approaches unity as Al shielding increases. This study provides a connection between damage produced in terrestrial accelerator-based characterizations and orbit irradiation in terms of both damage modes which can cause optoelectronic components to fail: displacement damage and total ionizing dose.

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Compendium of Total Ionizing Dose Results and Displacement Damage Results for Candidate Spacecraft Electronics for NASA

Cited by 11 publications

References 0 publications

Total Ionizing Dose and Dose Rate Effects in Candidate Spacecraft Electronic Devices

Total Ionizing Dose and Dose Rate Effects in Candidate Spacecraft Electronic Devices

Low dose rate test results of national semiconductor's ELDRS-free bipolar comparators LM111 and LM119

Orbital Equivalence of Terrestrial Radiation Tolerance Experiments

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