Comparisons of microwave performance between single-gate and dual-gate MODFETs

Improved breakdown characteristic of AlGaN/GaN HEMTs with a width gradient recessed dual-gate structure

“…Meanwhile, the enhanced output impedance prompts S22 of DG to shift toward the infinite resistance circle. The reduced magnitude (S12) and increased output impedance (S22) behaviour both contribute to an improved power gain [16,17].…”

Analytical modeling and simulation of subthreshold behavior in nanoscale dual material gate AlGaN/GaN HEMT

“…However, the reduction of gate length below 300 nm results in serious drawbacks of: (a) poor carrier transport efficiency; and (b) short channel effects (SCEs) [6,7]. The Dual Gate FET structure [9] is an effective way for overcoming the SCEs because of the screening of the drain voltage by the second gate with a dc bias. However, it does not result in any improvement in the carrier transport efficiency, which is dependent on the electric field distribution along the channel.…”

Analysis of dual‐gate high electron mobility transistor using an unconditionally stable time domain method

“…Yet, using optimum multi-finger architectures can intrinsically diminish the parasitic resistance and hence enhancing the f max [6]. As a result, dual-gate transistors are widely used in various high-performance microwave devices, due to their more privileges compared with their single-gate counterparts [7]. Specifically, dual-gate transistors provide higher-gain and higher-output impedance than a singlegate transistor, leading to cost-effective high-gain monolithic microwave integrated circuit designs [8,9].…”