Superlattices and Microstructures volume 44, issue 1, P37-53 2008 DOI: 10.1016/j.spmi.2008.01.023 View full text
Sona P. Kumar, Anju Agrawal, Rishu Chaujar, Mridula Gupta, R.S. Gupta

Abstract: A two-dimensional (2-D) analytical model for a Dual Material Gate (DMG) AlGaN/GaN High Electron Mobility Transistor (HEMT) has been developed to demonstrate the unique attributes of this device structure in suppressing short channel effects (SCEs). The model accurately predicts the channel potential, electric field variation along the channel, and sub-threshold drain current, taking into account the effect of lengths of the two gate metals, their work functions, barrier layer thicknesses, and applied drain bi…

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