Improved breakdown characteristic of AlGaN/GaN HEMTs with a width gradient recessed dual-gate structure

Abstract

A dual-gate (DG) structure utilizing an integrated width gradient DC gate to balance the high-voltage and output current drop was performed for the fabrication of AlGaN/GaN high-electron-mobility transistor (HEMT). In comparison to the traditional single-gate devices, the DG HEMTs combine significantly allowable breakdown voltage behaviour with low gate leakage current and a positive shift threshold voltage, delivering one order of magnitude reduction in leakage current and a 36% improvement in maximum drain bias. The evaluated S parameters substantially exhibit a high power gain potential for DG devices due to the presence of DC gate.

Design of High-Performance Inorganic–Organic Hybrid Nonlinear Optical Materials Using Superhalogen Al13 and Dianhydrides

“…The experiments were performed in the solid phase, while the calculations were performed in the gas phase, leading to differences in the results. For PTCDA, there is a strong absorption peak between 400 and 550 nm, which is consistent with the experimental results . Therefore, we chose the CAM-B3LYP functional to simulate the current systems.…”

“…For PTCDA, there is a strong absorption peak between 400 and 550 nm, which is consistent with the experimental results. 59 Therefore, we chose the CAM-B3LYP functional to 5. As illustrated in Figure 5, the absorption spectrum of the three complexes contains a single absorption peak at wavelengths from 300 to 1000 nm.…”

Sensitivity improvement in gate engineered technique dielectric modulated GaN MOSHEMT with InGaN notch for label-free biosensing

“…The figure shows that g d is a minimum of 12.5 mS/mm for high permittivity (k = 9) and is a maximum of around 19.5 mS/mm for low permittivity (k = 1.5) biomolecules. Moreover, the InGaN back-barrier with DMG improves the gate control in the channel, suppressing leakage, providing high sensitivity, and ensuring stable device operation [18,24]. In DMG devices, the gate shields the drain current fluctuations to reduce the leakage effects.…”

“…Additionally, the proposed device projects a 9% improvement in transconductance and breakdown voltage [23]. Young In Jang [24] represented a paper on dual metal (DM) AlGaN/GaN MISHEMTs and compared with the single metal (SM) structure. The DM device structure significantly improves g m , f T , and f Max by suppressing current collapse.…”

Insights into dynamic switching behavior and electric field distribution of depletion-mode GaN HEMT with bonding pad over active layout

“…Figure 1 shows the cross-sectional schematic and subdivision structure of the BPOA layout, where the sapphire-based epitaxial structure includes a 1.7 µm GaN buffer layer, a 300 nm GaN channel layer and an 18 nm Al 0.23 Ga 0.77 N barrier layer. And a 400 nm SiN protective surface layer is used to form the gate field plate [11]. To construct the BPOA layout, four different inorganic materials, including SiO 2 , SiN, Al 2 O 3 and HfO 2 [12,13], are employed as IMD layers separately for comprehensive investigation.…”