Comparison of Xilinx Virtex-II FPGA SEE sensitivities to protons and heavy ions

Koga, R.; George, J.; Swift, G.M.; Yui, C.; Edmonds, Larry D.; Carmichael, C.; Langley, T.; Murray, Paul; Lanes, K.; Napier, Mary E.

doi:10.1109/tns.2004.835057

Cited by 57 publications

(34 citation statements)

References 20 publications

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“…For device C, the neutron and proton cross sections are about 10-14 cm2/bit. These values are in the same order of magnitude than other data on commercial bulk SRAM published by Dyer et al[10] and Koga et al[11]. Proton cross section increases of about 2.5 from 23 to 44 MeV.…”

supporting

confidence: 79%

Analysis of Quasi-monoenergetic neutron SEU cross sections for Terrestrial applications

Lambert

Baggio

Hubert

et al. 2005

2005 8th European Conference on Radiation and Its Effects on Components and Systems

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This paper investigates the single event upset sensitivity of Bulk SRAMs to neutron and proton irradiations with energy range from 20 to 180 MeV. The technology sensitivity is analyzed with both quasimonoenergetic neutron and proton experiments. Analytical and simulation based correction methods of the neutron cross section are presented and validated. Then, neutron and proton cross section are compared. Soft error rate with proton data and neutron data are presented.Index Terms-Bulk technologies, neutron and proton effects, soft error rate (SER), single-event upset (SEU).

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supporting

confidence: 79%

Analysis of Quasi-monoenergetic neutron SEU cross sections for Terrestrial applications

Lambert

Baggio

Hubert

et al. 2005

2005 8th European Conference on Radiation and Its Effects on Components and Systems

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“…Critical charges lower than fC lead SRAM cells to be very sensitive to heavy ions and at a lower extent to high energy protons (above 30 MeV). Secondary ions created by nuclear reactions of protons on silicon nuclei are responsible for a large amount of SEUs in advanced technologies [2]. The same mechanisms are observed with atmospheric neutrons at both avionic altitudes and sea level.…”

Section: Introductionmentioning

confidence: 74%

Neutron and proton-induced single event upsets in advanced commercial fully depleted SOI SRAMs

Baggio¹,

Ferlet-Cavrois²,

Lambert³

et al. 2005

IEEE Trans. Nucl. Sci.

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The SEU sensitivity of 0.2 m fully depleted silicon on ensulator (FD-SOI) devices to proton and neutron irradiations is investigated in a large energy range (14-500 MeV). The comparison to bulk devices with similar gate lengths shows an improvement of a factor of 50 with the presence of body ties. Monte Carlo simulations were performed to confirm that the low sensitivity of FD-SOI is mainly due to the reduced sensitive volume. These results were extrapolated to deca-nanometric technologies to predict the behavior of advanced SOI processes. We found that fully depleted devices will be far less sensitive than partially depleted technologies to the terrestrial radiative environment.

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“…In addition to the Weibull curve in (1), data were also fitted by the Edmond equation [12], which was used in the analysis of SEFIs in VirtexII devices, as reported in [13], (2) where is the device cross section, is the fitting parameter denoting the saturation cross section and is another fitting parameter denoting the LET at which the cross section is 1/e times the saturation cross section.…”

Section: Experimental Results and Analysismentioning

confidence: 99%

SEU sensitivity of virtex configuration logic

Alderighi

Candelori²,

Casini³

et al. 2005

IEEE Trans. Nucl. Sci.

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This paper presents a strategy of investigation of SEU upset mechanisms in the configuration logic of Virtex I devices. Measurement procedures specifically addressing configuration logic and a hardware set up for radiation testing are described. The results of a heavy ion radiation test are then presented. Previously unreported failure mechanisms have been observed and classified and their corresponding cross sections measured.Index Terms-Field programmable gate arrays (FPGA), heavy ion radiation effects, radiation effects, semiconductor device radiation testing, single event effects.

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Comparison of Xilinx Virtex-II FPGA SEE sensitivities to protons and heavy ions

Cited by 57 publications

References 20 publications

Analysis of Quasi-monoenergetic neutron SEU cross sections for Terrestrial applications

Analysis of Quasi-monoenergetic neutron SEU cross sections for Terrestrial applications

Neutron and proton-induced single event upsets in advanced commercial fully depleted SOI SRAMs

SEU sensitivity of virtex configuration logic

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