Comparison of Ti and Pt silicon carbide Schottky rectifiers

Bhatnagar,; Nakanishi,; McLarty,; Baliga,; Patnaik,; Parikh,

doi:10.1109/iedm.1992.307476

Cited by 6 publications

(7 citation statements)

References 6 publications

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“…Moreover, it was also reported that the SBH of Pt Schottky contact on 6H-SiC will increase significantly after post deposition annealing at temperatures of 600°C and above [47,15,74]. As shown in Fig.…”

Section: "mentioning

confidence: 87%

“…However, it was suggested in [119] that the method could give rise to electric field crowding in the passivation oxide at the edge of the field plate, raising concern of oxide reliability at high temperatures. The method of implanting a high dose of argon into the surface of the SiC area at the periphery of the device has been used and voltages close to ideal breakdown were also achieved [95,15,103,96,84]. By implanting a high dose of inert gas atoms into SiC, the exposed SiC will be damaged and turns into a high resistive region, which effectively reduces the field crowding at the device periphery ( Fig.…”

Section: ---]---mentioning

confidence: 98%

“…Many works were reported on edge termination of SiC SBD to achieve high breakdown voltages [2,15,51,63,[95][96][97][98][99][100][103][104][105][106][107][108][109][110][111][112][113][114][115][116][117][118][119]]. 1 1 1990 1992 1994 1996 1998 2000 2002 2004 2006 Year Fig.…”

Section: Termination Techniquesmentioning

confidence: 99%

“…nkT, ( (15) where I F is the forward current, A is the device active area and R sp , 0 n is the diode specific on-resistance which is an important parameter for a SBD. A low specific on-resistance is desirable since a smaller chip size will be needed to handle a given amount of current.…”

Section: Vmentioning

confidence: 99%

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Silicon Carbide Schottky Barrier Diode

Zhao

Sheng

Lebron-Velilla

2005

Int. J. Hi. Spe. Ele. Syst.

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This chapter reviews the status of SiC Schottky barrier diode development. The fundamentals of Schottky barrier diodes are first provided, followed by the review of high-voltage SiC Schottky barrier diodes, junction-barrier Schottky diodes and merged-pin-Schottky diodes. The development history is reviewed and the key performance parameters are discussed. Applications of SiC SBDs in power electronics circuits as well as other areas such as gas sensors, microwave and UV detections are also presented, followed by discussion of remaining challenges.

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Section: "mentioning

confidence: 87%

Section: ---]---mentioning

confidence: 98%

Section: Termination Techniquesmentioning

confidence: 99%

Section: Vmentioning

confidence: 99%

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Silicon Carbide Schottky Barrier Diode

Zhao

Sheng

Lebron-Velilla

2005

Int. J. Hi. Spe. Ele. Syst.

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“…The efficiency of these devices at high operating temperatures depends on the combination of good interface characteristics of metal/SiC contacts and their thermal stability and reliability. While there are many reports on metal/6H-SiC structure investigations [1,2,[6][7][8][9][10][11][12], the Schottky contacts to 4H-SiC are less studied [1,2,13]. Since the performance of Schottky rectifiers depends on barrier behaviour, the investigation and control of metal/SiC interface properties is found to be of significant importance for Schottky-based electronic devices development.…”

Section: Introductionmentioning

confidence: 99%

Thermostable Ti/Au/Pt/Ti Schottky contacts to n-type 4H-SiC

Kassamakova

Kakanakova‐Georgieva

Kakanakov

et al. 1998

Semicond. Sci. Technol.

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The electrical properties and interface chemistry of Ti/Au/Pt/Ti Schottky contacts to n-type 4H-SiC have been investigated with respect to their utilization for MESFETs operated at high temperatures. The electrical properties of these contacts were studied at room temperature as well as during thermal treatment. The barrier height determined from I -V characteristics was calculated to be 1.17 eV with an ideality factor of 1.09. These parameters were examined by ageing and temperature dependence tests as criteria for the thermal stability and reliability of the contacts. The barrier height and ideality factor did not change after prolonged heating at a constant temperature of 500 • C and operating temperatures up to 350 • C, which confirmed the contact stability. Diodes used in the measurements showed a low leakage current at 100 V reverse voltage and room temperature (2.48 × 10 −9 A) as well as at 350 • C (2.15 × 10 −5 A) and breakdown voltage above 400 V.The chemical interface properties were studied by x-ray photoelectron spectroscopy for as-deposited, annealed and heated contacts. Annealing at 575 • C for 10 min led to formation of TiC and Pt x Si in a restricted region close to the SiC interface. The data revealed a chemically stable Ti/SiC interface after annealing, which is of importance for stable rectifying characteristics during long-term operation.

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