Effect of surface inhomogeneities on the electrical characteristics of SiC Schottky contacts

Bhatnagar, M.; Baliga, B. Jayant; Kirk, H. R.; Rozgonyi, G. A.

doi:10.1109/16.477606

Cited by 113 publications

(73 citation statements)

References 23 publications

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“…31,32 Our results indicate improved electrical characteristics and thermal stability of ZrB 2 /SiC Schottky contacts using high-temperature metal deposition, and this makes ZrB 2 a very attractive contact metallization for high-temperature applications.…”

Section: Introductionmentioning

confidence: 84%

Improved Schottky Contacts on n-Type 4H-SiC Using ZrB2 Deposited at High Temperatures

Oder

Martin

Adedeji

et al. 2007

Journal of Elec Materi

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We report on improved electrical properties and thermal stability of ZrB 2 Schottky contacts deposited on n-type 4H-SiC at temperatures between 20°C and 800°C. The Schottky barrier heights (SBHs) determined by current-voltage measurements increased with deposition temperature, from 0.87 eV for contacts deposited at 20°C to 1.07 eV for those deposited at 600°C. The Rutherford backscattering spectroscopy (RBS) spectra of these contacts revealed a decrease in oxygen peak with an increase in the deposition temperature and showed no reaction at the ZrB 2 /SiC interface. These results indicate improved electrical and thermal properties of ZrB 2 /SiC Schottky contacts, making them attractive for high-temperature applications.

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Section: Introductionmentioning

confidence: 84%

Improved Schottky Contacts on n-Type 4H-SiC Using ZrB2 Deposited at High Temperatures

Oder

Martin

Adedeji

et al. 2007

Journal of Elec Materi

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“…If successful, such a study might be able to conclusively link specific kinds of crystal defects to important electrical anomalies observed in the SiC Schottky diode literature (particularly Refs. [2], [7], and [8]). …”

Section: Methodsmentioning

confidence: 99%

“…Electron-beam-induced current (EBIC) measurement using the planar mapping technique enables quantitative analysis and spatial visualization of recombination centers that reduce the diffusion length of minority carriers in 6H-SiC Schottky diodes [1,2,3]. Such a procedure coupled with synchrotron white-beam x-ray topography (SWBXT), through which closed core screw dislocations may be identified by their stress signature in the crystal lattice [4], gives insight into the effects of these defects on the minority carrier diffusion length.…”

Section: Introductionmentioning

confidence: 99%

Correlation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky Diodes

Schnabel

Tabib‐Azar

Neudeck

et al. 2000

MSF

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“…It is widely noted that surface characteristics are strongly connected to the overall performance of SiC Schottky-barrier-type devices. 6 Local field enhancement by sharp-apex pits is offered as an explanation for nonideal characteristics for Schottky barrier heights in SiC devices. 10 Field enhancement may also occur around the stripe-shaped pits linked to edge dislocations since they are of comparable size to sharpapex pits and exhibit sharp features as well.…”

Section: Discussionmentioning

confidence: 99%

“…3,4 Such fatal surface defects are primarily associated with polytype inclusions or stacking faults and produce large enough morphological features to be readily observable by optical microscopy. 4,5 It has been previously argued that screw dislocations can also influence device characteristics, such as inhomogeneities in Schottky barrier heights 6 or the reverse leakage and breakdown properties of p-n junctions in 4H-SiC. 7 Screw dislocations were discovered to produce sharp-apex pits at SiC surfaces by correlating AFM imaging of these features with synchrotron white-beam X-ray topography (SWBXT).…”

Section: Introductionmentioning

confidence: 99%

Imaging Surface Pits and Dislocations in 4H-SiC by Forescattered Electron Detection and Photoluminescence

Picard

Liu

Stahlbush

et al. 2007

Journal of Elec Materi

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Forescattered electron detection (FED) was utilized to image surface depressions resulting from threading screw and edge dislocations in 4H-SiC epitaxial layers. These surface depressions, or growth pits, exhibited two morphology types. Screw and edge dislocations could be imaged by photoluminescence and differentiated by their interactions with propagating partial dislocations (PDs). Correlations between FED and photoluminescence showed that sharpapex pits 1 lm in size and strip-shaped pits 500 nm in size could be linked to individual screw and edge dislocations, respectively. Forescattered electron detection demonstrated sufficient sensitivity to image surface features previously resolvable only by atomic force microscopy. This new technique is nondestructive, noncontact, and capable of rapid, spatial mapping of growth pits resulting from threading screw and edge dislocations in SiC epitaxial layers.

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Effect of surface inhomogeneities on the electrical characteristics of SiC Schottky contacts

Cited by 113 publications

References 23 publications

Improved Schottky Contacts on n-Type 4H-SiC Using ZrB2 Deposited at High Temperatures

Improved Schottky Contacts on n-Type 4H-SiC Using ZrB2 Deposited at High Temperatures

Correlation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky Diodes

Imaging Surface Pits and Dislocations in 4H-SiC by Forescattered Electron Detection and Photoluminescence

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