Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy

Potin, Valérie; Hahn, E.; Rosenauer, A.; Gerthsen, D.; Kuhn, Barbara; Scholz, F.; Dussaigne, Amélie; Damilano, B.; Grandjean, N.

doi:10.1016/j.jcrysgro.2003.10.082

Cited by 67 publications

(29 citation statements)

References 19 publications

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“…A detailed analysis of a similarly grown sample yielded R = 0.69 for a growth temperature of 720 °C, while a stronger segregation with R = 0.85 ± 0.05 at 530 °C was obtained for the MBE sample (Fig. 5) by Potin et al [42]. It has to be noted, that the Inconcentration profile of the MBE sample (Fig.…”

Section: Discussionmentioning

confidence: 82%

Indium distribution in epitaxially grown InGaN layers analyzed by transmission electron microscopy

Gerthsen

Hahn

Neubauer

et al. 2003

phys. stat. sol. (c)

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An overview is given about microstructure and composition analyses of InGaN quantum wells embedded in Ga(Al)N barriers to study the mechanisms which determine the In distribution in epitaxially grown InGaN layers. The applied technique is transmission electron microscopy (TEM). The main prerequisite for this work was the development of a technique based on high-resolution lattice fringe images that allows quantitative chemical analyses of InGaN on an atomic scale. A large variety of samples was investigated that were produced by molecular beam epitaxy (MBE) and metal-organic vapor phase epitaxy (MOVPE). The effect of the deposition temperature, growth rate, strain and high-temperature annealing treatments on the average In concentration and In distribution was studied to assess the influence of phase separation, In surface segregation and In desorption. Composition fluctuations in InGaN are always observed on two different lateral scales independent of the growth technique and particular set of growth parameters but the strength of the composition fluctuations can be influenced by the details of the growth.

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Section: Discussionmentioning

confidence: 82%

Indium distribution in epitaxially grown InGaN layers analyzed by transmission electron microscopy

Gerthsen

Hahn

Neubauer

et al. 2003

phys. stat. sol. (c)

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“…2. The experimental data [34][35][36][37][38][39][40][41] will be discussed below. Later, more detailed VFF and first principles calculations [42] indicate that the equilibrium solubility may even be slightly smaller.…”

Section: Phase Separationmentioning

confidence: 99%

Microstructures produced during the epitaxial growth of InGaN alloys

Stringfellow¹

2010

Journal of Crystal Growth

155

123

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“…Hence, the tails are suggested to be a consequence of residual In, segregating on the surface of the sample before desorption or incorporation. 22 As can be seen from the onset energy for each ticker QW, E p is slightly reduced for each well even after >30 nm of GaN interlayer growth, due to the increasing amount of residual In segregating on the surface with increasing well thickness. To estimate the maximum amount of incorporated In in each well, E p value was used.…”

Section: Resultsmentioning

confidence: 93%

Characterization of InGaN/GaN quantum well growth using monochromated valence electron energy loss spectroscopy

Pališaitis

Lundskog

Forsberg

et al. 2014

Journal of Applied Physics

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The early stages of InGaN/GaN quantum well growth for In-reduced conditions have been investigated for varying thickness and composition of the wells. The structures were studied by monochromated scanning transmission electron microscopy-valence electron energy loss spectroscopy spectrum imaging at high spatial resolution. It is found that beyond a critical well thickness and composition, quantum dots (width >20 nm) are formed inside the well. These are buried by compositionally graded InGaN, which is formed as GaN is grown while residual In is incorporated into the growing structure. It is proposed that these dots act as carrier localization centers inside the quantum wells. V C 2014 AIP Publishing LLC. [http://dx

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Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy

Cited by 67 publications

References 19 publications

Indium distribution in epitaxially grown InGaN layers analyzed by transmission electron microscopy

Indium distribution in epitaxially grown InGaN layers analyzed by transmission electron microscopy

Microstructures produced during the epitaxial growth of InGaN alloys

Characterization of InGaN/GaN quantum well growth using monochromated valence electron energy loss spectroscopy

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