Comparison of structural and optical properties in strained GaInAsP MQW structures grown by MOVPE and MOMBE

Kroner, P.; Baumeister, H.; Rieger, J.; Veuhoff, E.; Marti, Othmar; Heinecke, H.

doi:10.1016/s0022-0248(99)00584-9

Cited by 7 publications

(3 citation statements)

References 13 publications

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“…To understand the origin of the extended defects and their correlation with the W/B strain, we start from the fact that one layer in the MQW (for whatever reason) exhibits wavy growth. In our structures, tensile layers seem to be responsible for this effect-in agreement with other findings [3,8]. Due to the elastic relaxation phenomena, the growth front of a wavy layer exhibits lattice parameter fluctuations, the thickest regions being partially relaxed compared to the thinnest ones.…”

Section: Discussionsupporting

confidence: 92%

Extended defects in InGaAs/InGaAs strain-balanced multiple quantum wells for photovoltaic applications

Nasi¹,

Ferrari²,

Lazzarini³

et al. 2002

J. Phys.: Condens. Matter

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Different strain-balanced InGaAs/InGaAs multiple quantum wells (MQWs) were grown on (001) InP changing the In composition in the wells/barriers in order to extend the absorption edge beyond 2 µm for thermophotovoltaic applications. The strain increase in the structures results in the formation of isolated highly defected regions taking their origin from lateral layer thickness modulations. Experimental results are consistent with the existence of a critical elastic energy density for the development of MQW waviness. An empirical model for predicting the maximum number of layers that can be grown without modulations as a function of the strain energy stored in the MQW period is presented.

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Section: Discussionsupporting

confidence: 92%

Extended defects in InGaAs/InGaAs strain-balanced multiple quantum wells for photovoltaic applications

Nasi¹,

Ferrari²,

Lazzarini³

et al. 2002

J. Phys.: Condens. Matter

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show abstract

“…In accordance with other authors (see Refs. [5,9]) the undulations were found to start in the tensile to compressive layer interfaces and propagate vertically through the MQW structure with increasing amplitude. It is also observed (Fig.…”

Section: Article In Pressmentioning

confidence: 94%

“…Various structural studies have been reported on SB MQWs such as InGaAsP/InGaAsP on InP [5], InGaAs/InGaP on InP [6], InGaAs/GaAsP on GaAs [2,7] InGaAs/InGaAs on InP [8] and InGaP/InAsP on InP [9]. Regardless of the system, it can be found that the SB epitaxy is very critical when the W-B misfits are of the order of 1% and often results in the onset of the wavy growth mode even if a few layers are grown.…”

Section: Introductionmentioning

confidence: 99%