Comparison of quantum Hall effect resistance standards of the BNM/LCIE and the BIPM

Delahaye, F.; Witt, Thomas J.; Piquemal, F.; Genevès, G.

doi:10.1109/19.377825

Cited by 33 publications

(36 citation statements)

References 10 publications

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“…The experimental proof of the efficiency of the multiple connections technique for metrological applications was firstly obtained for two Hall bars placed in parallel 14,21 , then for Hall bars connected in auto-series 22 . We have successfully realized the first standard made of ten Hall bars connected in series by triple links 22 .…”

Section: Introductionmentioning

confidence: 99%

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R K /100 and RK/200 quantum Hall array resistance standards

Poirier

Bounouh

Hayashi

et al. 2002

Journal of Applied Physics

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It is theoretically possible to combine several Hall bars in arrays to define new quantum standards with perfectly quantized resistance values. We have thus, for the first time, developed and fabricated novel Quantum Hall Array Resistance Standards (QHARS) made of a large number N (N=100, 50) of Hall bars placed in parallel using a triple connections technique. The Hall resistance of these quantum standards is found to be very well quantized. On the i=2 Hall plateau, the resistance of specific good arrays stays equal to R K /2N within 5 parts in 10 9 for supplying currents up to 2 mA at a temperature of 1.3 K. The mean longitudinal resistance of the Hall bars which constitute the arrays has been determined through the analysis of the array equivalent electrical circuit. This measurement shows that the carrier transport in the Hall bars is dissipationless. This work therefore demonstrates the efficiency of the multiple connections technique and consequently that QHARS are likely to extend the QHE metrological applications.

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Section: Introductionmentioning

confidence: 99%

“…However, this kind of standard is rare. Direct comparison of QHE set-ups obviously constitutes a very accurate 21 but nevertheless cumbersome calibration method. QHARS used as traveling standards might solve a lot of these problems.…”

Section: Introductionmentioning

confidence: 99%

R K /100 and RK/200 quantum Hall array resistance standards

Poirier

Bounouh

Hayashi

et al. 2002

Journal of Applied Physics

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“…We have compared three PL sample series (PL173, PL174, PL175) to the LEP514 which is known for its optimal metrological qualities [10]. All samples were grown and processed at the Philips Laboratory (PL formerly LEP) in Limeil Brévannes.…”

Section: Introductionmentioning

confidence: 99%

Behavior of the contacts of quantum Hall effect devices at high currents

Meziani¹,

Chaubet²,

Bonifacie³

et al. 2004

Journal of Applied Physics

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This paper reports on an experimental study of the contact resistance of Hall bars in the Quantum Hall Effect regime while increasing the current through the sample. These measurements involve also the longitudinal resistance and they have been always performed before the breakdown of the Quantum Hall Effect. Our investigations are restricted to the i = 2 plateau which is used in all metrological measurements of the von Klitzing constant R K . A particular care has been taken concerning the configuration of the measurement. Four configurations were used for each Hall bar by reversing the current and the magnetic field polarities. Several samples with different width have been studied and we observed that the critical current for the contact resistance increases with the width of the Hall bar as previously observed for the critical current of the longitudinal resistance. The critical currents exhibit either a linear or a sublinear increase. All our observations are interpreted in the current understanding of the Quantum hall effect brekdown. Our analysis suggests that a heated region appears at the current contact, develops and then extends in the whole sample while increasing the current. Consequently, we propose to use the contact resistance as an electronic thermometer for the Hall fluid.

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“…Including the results of new calculations 36, 37] the current status of theoretical prediction is as follows. Using the value of from (21), R 1 from (7) (any value listed there may be used), and m =m e from (68), we nd (theory) = 4 463 302:51 (1:34) (0:21) (0:16) (0:06) kHz ; (28) where the rst and second errors re ect the uncertainties in the measurements of m and ?1 , listed in (68) and (21). The third error comes from the uncertainty in the numerical evaluation of the (Z ) 2 correction term 38].…”

Section: Muonium Hyper Ne Structurementioning

confidence: 99%

The fine-structure constant

Benka¹

2004

Physics Today

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Comparison of quantum Hall effect resistance standards of the BNM/LCIE and the BIPM

Cited by 33 publications

References 10 publications

R K /100 and RK/200 quantum Hall array resistance standards

R K /100 and RK/200 quantum Hall array resistance standards

Behavior of the contacts of quantum Hall effect devices at high currents

The fine-structure constant

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