R
                  K
              /100
           and RK/200 quantum Hall array resistance standards

Poirier, W.; Bounouh, Alexandre; Hayashi, Koichi; Fhima, H.; Piquemal, F.; Genevès, G.; André, J.P.

doi:10.1063/1.1495893

Cited by 45 publications

(40 citation statements)

References 43 publications

(56 reference statements)

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“…Then a 40-nm-thick 10 18 cm −3 Si-doped Al x Ga 1−x As layer is realized, with a gradual decrease of x from 0.28 to 0 for PL175 and homogeneous x=0.28 value for PL173. The two other types of samples, PL174 and LEP514, have similar layers [8,17,18]. Finally, an n-type 12 nm GaAs cap layer covers the heterostructure to improve the quality of ohmic contacts.…”

Section: A Samplesmentioning

confidence: 99%

Behavior of the contacts of quantum Hall effect devices at high currents

Meziani¹,

Chaubet²,

Bonifacie³

et al. 2004

Journal of Applied Physics

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This paper reports on an experimental study of the contact resistance of Hall bars in the Quantum Hall Effect regime while increasing the current through the sample. These measurements involve also the longitudinal resistance and they have been always performed before the breakdown of the Quantum Hall Effect. Our investigations are restricted to the i = 2 plateau which is used in all metrological measurements of the von Klitzing constant R K . A particular care has been taken concerning the configuration of the measurement. Four configurations were used for each Hall bar by reversing the current and the magnetic field polarities. Several samples with different width have been studied and we observed that the critical current for the contact resistance increases with the width of the Hall bar as previously observed for the critical current of the longitudinal resistance. The critical currents exhibit either a linear or a sublinear increase. All our observations are interpreted in the current understanding of the Quantum hall effect brekdown. Our analysis suggests that a heated region appears at the current contact, develops and then extends in the whole sample while increasing the current. Consequently, we propose to use the contact resistance as an electronic thermometer for the Hall fluid.

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Section: A Samplesmentioning

confidence: 99%

Behavior of the contacts of quantum Hall effect devices at high currents

Meziani¹,

Chaubet²,

Bonifacie³

et al. 2004

Journal of Applied Physics

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“…Good quantization in the quantum Hall regime is only observed for plateaus with a low filling factor: ν = 2 and possibly ν = 4 14 . Therefore, a single quantum Hall device can provide a standard of resistance with a value R K /2 ≈ 12.9 kΩ or R K /4 ≈ 6.45 kΩ.…”

Section: Introductionmentioning

confidence: 99%

A prototype of RK/200 quantum Hall array resistance standard on epitaxial graphene

Lartsev

Lara‐Avila

Danilov

et al. 2015

Journal of Applied Physics

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Epitaxial graphene on silicon carbide is a promising material for the next generation of quantum Hall resistance standards. Single Hall bars made of graphene have already surpassed their state-of-the-art GaAs based counterparts as an R K /2 (R K = h/e 2 ) standard, showing at least the same precision and higher breakdown current density. Compared to single devices, quantum Hall arrays using parallel or series connection of multiple Hall bars can offer resistance values spanning several orders of magnitude and (in case of parallel connection) significantly larger measurement currents, but impose strict requirements on uniformity of the material. To evaluate the quality of the available material, we have fabricated arrays of 100 Hall bars connected in parallel on epitaxial graphene. One out of four devices has shown quantized resistance that matched the correct value of R K /200 within the measurement precision of 10 −4 at magnetic fields between 7 and 9 Tesla. The defective behaviour of other arrays is attributed mainly to non-uniform doping. This result confirms the acceptable quality of epitaxial graphene, pointing towards the feasibility of well above 90% yield of working Hall bars.

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“…Considering interconnection resistance of 1 Ω, triple connection technique is enough to realize Quantum Hall Array Resistance Standards (QHARS) accurate 23,24 with an uncertainty of less than one part in 10 9 . The realization of QHARS mainly relies on the two-dimensional electron gas (2DEG) properties, notably its homogeneity, and on the quality of the electrical contact to it.…”

Section: Quantum Hall Array Resistance Standardmentioning

confidence: 99%

Quantum Hall Effect and Ohm Metrology

Poirier

Schopfer

2009

Int. J. Mod. Phys. B

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The quantum Hall effect (QHE) discovery has revolutionized the ohm metrology: the representation of the unit of resistance is now universal and the ohm can be maintained in each national metrology institute with a relative uncertainty of one part in 10 9 . This breakthrough also results from the development of resistance comparison bridges using cryogenic current comparator (CCC). The fundamental properties of the QHE allow the realization of Quantum Hall Array Resistance Standards (QHARS) by combining a large number of single Hall bars connected in series and/or in parallel. These standards can be as accurate as a single Hall bar. More generally, the multiple connection technique allows metrologists to design useful circuits based on quantum Hall resistors like voltage dividers or Wheatstone bridges. The QHE Wheatstone bridge is particularly suitable for comparing quantum standards. By detecting the unbalance current of this bridge with a CCC, new universality tests of the QHE with a target uncertainty less than 10 11 can be realized.

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R K /100 and RK/200 quantum Hall array resistance standards

Cited by 45 publications

References 43 publications

Behavior of the contacts of quantum Hall effect devices at high currents

Behavior of the contacts of quantum Hall effect devices at high currents

A prototype of RK/200 quantum Hall array resistance standard on epitaxial graphene

Quantum Hall Effect and Ohm Metrology

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