Comparison of On-Wafer TRL Calibration to ISS SOLT Calibration With Open-Short De-Embedding up to 500 GHz

Fregonèse, Sébastien; Deng, Mingke; Matos, Magali De; Yadav, Chandan; Joly, Simon; Plano, Bernard; Raya, Christian; Ardouin, Bertrand; Zimmer, Thomas

doi:10.1109/tthz.2018.2884612

Cited by 38 publications

(25 citation statements)

References 15 publications

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“…While previous studies were based on experimental demonstration, Fregonese et al [11] took a different approach, using both experimental data and EM simulation to compare off-wafer SOLT and TRL calibration with on-wafercalibration. The EM-based approach includes a model for the RF probes and models of the off-wafer and the on-wafer calibration kit and on-wafer devices-under-test (DUT).…”

Section: Calibration and De-embedding Methodsmentioning

confidence: 99%

THz Characterization and Modeling of SiGe HBTs: Review (Invited)

Fregonèse

Deng

Cabbia

et al. 2020

IEEE J. Electron Devices Soc.

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This paper presents a state-of-art review of on-wafer S-parameter characterization of THz silicon transistors for compact modelling purpose. After, a brief review of calibration/de-embedding techniques, the paper focuses on the onwafer calibration techniques and especially on the design and dimensions of lines built on advanced silicon technologies. Other information such as the pad geometry, the ground plane and the floorplan of the devices under test are also compared. The influence of RF probe geometry on the coupling with the substrate and adjacent structures is also considered to evaluate the accuracy of the measurement, especially using EM simulation methodology. Finally, the importance of measuring above 110 GHz is demonstrated for SiGe HBT parameter extraction. The validation of the compact model is confirmed thanks to an EM-spice cosimulation that integrates the whole calibration cum deembedding procedure.

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Section: Calibration and De-embedding Methodsmentioning

confidence: 99%

THz Characterization and Modeling of SiGe HBTs: Review (Invited)

Fregonèse

Deng

Cabbia

et al. 2020

IEEE J. Electron Devices Soc.

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“…To deepen the understanding of high frequency measurements, electromagnetic (EM) simulation is usually performed [10]- [15], [17], [19]- [21]. Out of these reported works, most of the EM simulation analyses are dedicated to test structures fabricated on non-Silicon substrate up to 110 GHz [12], [20] and above 110 GHz [10], [11], [15].…”

Section: Introductionmentioning

confidence: 99%

“…In [10], [15], the EM simulation analysis covering more than one frequency band is presented using only one RF probe model. For Si based test structures also, EM simulation analysis covering more than one frequency band (1 GHz to above 110 GHz) is presented using only one RF probe model [13], [14], [17]. In fact, the geometry and layout for each RF probe depends on the frequency band as well as on the probe head supplier.…”

Section: Introductionmentioning

confidence: 99%

Importance and Requirement of Frequency Band Specific RF Probes EM Models in Sub-THz and THz Measurements up to 500 GHz

Yadav

Deng

Fregonèse

et al. 2020

IEEE Trans. THz Sci. Technol.

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In this paper, we present on-silicon structures onwafer measurements up to 500 GHz and a comprehensive electromagnetic (EM) simulation analysis to understand nonideal behaviour in the measured data. The EM simulations are performed in such a way that the simulation setup remains very close to the physical measurement environment where a faithful true EM model of the RF probes is an essential requirement. In this process, four different RF probes used during measurements in the frequency bands 1 GHz-110 GHz, 140 GHz-220 GHz, 220 GHz-325 GHz and 325 GHz-500 GHz are designed in the EM simulator. We also highlight the importance of the frequency band specific probe models to develop a deep understanding of the problems encountered in the sub-THz and THz measurements.

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“…Up to now, most of the time, external calibration kits on alumina substrates are used. However, above 50-100 GHz, this characterization approach suffers from high measurement uncertainties due to difference of dielectric constant between the calibration kit and the silicon wafer, and also the coupling between the probes and the silicon wafer [1,2]. To overcome these issues, some authors propose to integrate an on-wafer calibration kit together with the DUT (Device Under Test) [3].…”

Section: Introductionmentioning

confidence: 99%

mm-Wave Through-Load Switch for in-situ Vector Network Analyzer on a 55-nm BiCMOS Technology

Margalef‐Rovira

Saadi

Bourdel

et al. 2020

2020 18th IEEE International New Circuits and Systems Conference (NEWCAS)

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In this paper, an innovative millimeter-wave (mmwave) through-load switch for in-situ reflectometers and on-wafer calibration is proposed. This two-port device can switch between two states: (i) a through connection or (ii) a 50 Ω load for both of its ports. The through-load switch is composed of a 3-dB directional coupler and two nMOS transistors controlled through a biasing voltage applied to their gate. Measurement results of a 120-GHz 3-dB directional coupler are provided up to 145 GHz together with EM simulations and circuit-level simulations up to 220 GHz of the through-load switch. A wide bandwidth is obtained, from 73 GHz to 179 GHz, with limited insertion loss of 2 dB.

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Comparison of On-Wafer TRL Calibration to ISS SOLT Calibration With Open-Short De-Embedding up to 500 GHz

Cited by 38 publications

References 15 publications

THz Characterization and Modeling of SiGe HBTs: Review (Invited)

THz Characterization and Modeling of SiGe HBTs: Review (Invited)

Importance and Requirement of Frequency Band Specific RF Probes EM Models in Sub-THz and THz Measurements up to 500 GHz

mm-Wave Through-Load Switch for in-situ Vector Network Analyzer on a 55-nm BiCMOS Technology

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