Comparison of n-type Gd2O3and Gd-doped HfO2

Losovyj, Yaroslav; Wooten, David J.; Santana, Juan Colon; An, J. M.; Belashchenko, Kirill D.; Lozova, N.; Petrosky, James C.; Sokolov, Andrei; Tang, Jinke; Wang, Wendong; Arulsamy, Navamoney; Dowben, Peter A.

doi:10.1088/0953-8984/21/4/045602

Cited by 40 publications

(28 citation statements)

References 35 publications

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“…These intensity resonances (Fig. 4) are very similar to those observed for Gd 2 O 3 [44] and Gd doped HfO 2 [23,44]. Not only are the resonant photon energies similar, but the features at the bottom of the valence band contain a strong feature at about −8 eV binding energy and a weaker shoulder in the vicinity of −10 eV binding energy.…”

Section: Identification Of the 4f Contributions To The Valence Band Osupporting

confidence: 75%

Resonant photoemission of rare earth doped GaN thin films

McHale

McClory

Petrosky

et al. 2011

Eur. Phys. J. Appl. Phys.

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Abstract. The 4d → 4f Fano resonances for various rare earth doped GaN thin films (RE = Gd, Er, Yb) were investigated using synchrotron photoemission spectroscopy. The resonant photoemission Fano profiles show that the major Gd and Er rare earth 4f weight is at about 5-6 eV below the valence band maximum, similar to the 4f weights in the valence band of many other rare earth doped semiconductors. For Yb, there is very little resonant enhancement of the valence band of Yb doped GaN, consistent with a largely 4f 14 occupancy.

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Section: Identification Of the 4f Contributions To The Valence Band Osupporting

confidence: 75%

Resonant photoemission of rare earth doped GaN thin films

McHale

McClory

Petrosky

et al. 2011

Eur. Phys. J. Appl. Phys.

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“…[19][20][21] Segregation and formation of a "surface" Gd 2 O 3 layer at the surface of the Gd-doped EuO films can be excluded as the combined photoemission and inverse photoemission are inconsistent with such an insulating (almost certainly n-type) surface oxide. 33 …”

Section: Methodsmentioning

confidence: 99%

“…[33][34][35]55 This contribution becomes evident at photon energies corresponding to the 4d → 4f super-Coster-Kronig resonance, 56 as in the case of 3% Gd-doped HfO 2 , 33,35,55 but with far less resonant enhancement in the case of Eu 0.96 Gd 0.04 O. Indeed, the Gd contribution to the bottom of the valence band, at photon energies off resonance in the case of Eu 0.96 Gd 0.04 O, is more difficult to discern.…”

Section: Valence-band Electronic Structurementioning

confidence: 99%

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Effect of gadolinium doping on the electronic band structure of europium oxide

Santana

et al. 2012

Phys. Rev. B

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B.; Yakovkin, I. N.; and Dowben, Peter A., "Effect of gadolinium doping on the electronic band structure of europium oxide" (2012 [111]. Angular-resolved photoemission spectroscopy reveals electron pockets around the X points in Gd-doped EuO, indicating that the band gap in EuO is indirect. Combined photoemission and inverse photoemission measurements show an apparent transition from n-type to p-type behavior, which is likely due to band bending near the polar (111) surface.

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“…Because the chemical potential µ i of element i (i = Gd, Ti, O) is dependent on the equilibrium condition, the following equilibrium conditions were considered at each equilibrium point shown in Fig. 1; 33 Because the bonding strength is also an essential factor to determine the ionic migration, the following chemical bonding analysis was performed. The net charge of the ion was calculated by Bader analysis, 34 which assigns electrons to a specific ion by a partitioning method enclosed with inflection points of the spatial charge distribution.…”

Section: A First-principles Calculationmentioning

confidence: 99%

Theoretical and experimental investigation of defect formation / migration in Gd2Ti2O7: General rule of oxide-ion migration in A2B2O7 pyrochlore

et al. 2016

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We investigated the intrinsic defect formation energy and oxide-ion migration mechanism in Gd2Ti2O7 pyrochlore. It was found that the vacancy formation energy of Gd is lower than that of Ti. For the oxygen vacancy, O(48f) was found to show lower vacancy formation energy than O(8b). The formation energy of the vacancy complex showed that the Gd vacancy is accompanied with the O(48f) vacancy, which is consistent with our experiment. The migration energy of O(48f) along the <100> direction, which is dominant migration path for ionic conduction, was calculated to be 0.43 eV. On the other hand, we found that Gd vacancy increases O(48f) migration energy. For example, the migration energy of O(48f) along the <100> direction was increased to be 1.36 eV by the local compressive strain around Gd vacancy. This finding could explain our previous experimental result of decreasing conductivity with increasing Gd deficiency. Along with the oxide-ion migration mechanism in Gd2Ti2O7, O(48f) migration energies along both <100> and <110> directions for various A2B2O7 pyrochlore structures were investigated. As a general trend of oxide-ion migration in the pyrochlore structure, we propose that O(48f) migration along the <100> direction is governed by the strength of B–O bonding. On the other hand, the ratio of ionic radius B/A is proposed to determine O(48f) migration along the <110> direction in A2B2O7 pyrochlore.

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Comparison of n-type Gd₂O₃and Gd-doped HfO₂

Cited by 40 publications

References 35 publications

Resonant photoemission of rare earth doped GaN thin films

Resonant photoemission of rare earth doped GaN thin films

Effect of gadolinium doping on the electronic band structure of europium oxide

Theoretical and experimental investigation of defect formation / migration in Gd2Ti2O7: General rule of oxide-ion migration in A2B2O7 pyrochlore

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