Effect of gadolinium doping on the electronic band structure of europium oxide

Santana, Juan Colon; An, J. M.; Wu, Ning; Belashchenko, Kirill D.; Wang, Xianjie; Liu, Pan; Tang, Jinke; Losovyj, Yaroslav; Yakovkin, I.N.; Dowben, Peter A.

doi:10.1103/physrevb.85.014406

Cited by 25 publications

(29 citation statements)

References 63 publications

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“…Recent results of angular-resolved photoemission spectroscopy on Gd and Ce doped EuO show filling of electron pockets in an otherwise empty conduction band, which is not observed in undoped EuO 1-x presented here. 24,45 This further suggests bound magnetic polaron is a more appropriate model than models based on exchange-split conduction bands or RKKY interaction to describe the magnetic ordering of EuO 1-x above 69 K, although it is not to say magnetic polarons do not exist in Gd and Ce doped EuO. Since the Eu local spins are fully aligned only at the very low temperature, the magnetic polaron state can be stable below 69 K extending over quite a large temperature range.…”

Section: Resultsmentioning

confidence: 99%

Antiferromagnetic coupling in EuO1−x

2012

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The mechanism for the ferromagnetic order in oxygen-deficient europium monoxide EuO 1-x at temperatures higher than 69 K (the Curie temperature Tc of stoichiometric EuO) remains controversial. We have investigated the magnetization of EuO 1-x thin films prepared via pulsed laser deposition as a function of temperature and applied field. The ferromagnetic ordering above 69 K originates from the exchange coupling between the doped electrons and Eu 4f moments and is described using a magnetic polaron model. Our data show that the magnetic polarons are coupled antiferromagnetically to the Eu 4f local moments that dominate the magnetization below 69 K. The magnetic polaron state is stable below 69 K and seems to persist down to a relatively low temperature. An explanation is given to account for the antiferromagnetic coupling. We also describe the evolution of the phases of the magnetic orders as the temperature is varied in EuO 1-x .2

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Section: Resultsmentioning

confidence: 99%

Antiferromagnetic coupling in EuO1−x

2012

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“…[23][24][25][26][27] In this context, the study of the magnetic properties of EuO, including the critical exponents, on a ferroelectric substrate is of especial interest because EuO as an insulator has few free carriers. On the other hand, the sizeable energy dispersion of Eu 4f state 18,28 is inconsistent with the Heisenberg model. 28 To investigate the magnetic properties of EuO under extrinsic doping, we have investigated EuO/BaTiO 3 /SrTiO 3 (EuO/ BTO/STO) heterostructures.…”

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confidence: 79%

“…16 Metal-toinsulator transition and colossal magneto-resistance have been reported in EuO systems with electron doping. 14,[17][18][19][20] Much effort has been put into investigating the influence of the substrate on the magnetic properties of EuO [2][3][4][5][6]11,12,21,22 including changes to the Curie temperature (T c ) and critical exponents. Ferroelectric (FE) substrates are unique due to the potential for electric modulation, coming from the ferroelectric polarization reversal, which can be considered as a form of extrinsic electrostatic doping at the FM-FE interfaces.…”

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confidence: 99%

Magnetoelectric coupling at the EuO/BaTiO3 interface

Cao

Liu

Tang

et al. 2013

Applied Physics Letters

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Magnetization modulation by ferroelectric polarization switching is reported for the ferromagnetic-ferroelectric EuO/BaTiO3 heterostructure. The value of the magnetization critical exponent β is consistent with the expected Heisenberg-like ferromagnetism of EuO and reported Curie temperature. The critical exponent is seen to decrease with increased magnetic coupling. The results are discussed in the context of data obtained earlier for epitaxial La0.67Sr0.33MnO3/BaTiO3 heterostructures, where magnetization increases and critical exponent β also declines with ferroelectric polarization pointing away from ferromagnetic layer. The observed similarity between two systems illustrates an importance of charge doping in magnetoelectric coupling, which can be modulated by ferroelectric polarization reversal.

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“…Therefore, d = 2.2Å can be used to simulate the transport properties of n-type EuO, as obtained for O-deficient barriers. [46][47][48] In the remainder of this paper, we will present the transport properties for both d = 2.4Å and d = 2.8Å, in order to illustrate the effect of a shift of E F induced by interface modifications. Importantly, we will demonstrate that for any position of E F , EuO always shows excellent spin-filter characteristics up to high bias voltages.…”

Section: Spin Transport Properties Of the Euo Junction At Zero Biasmentioning

confidence: 99%

Electronic transport through EuO spin-filter tunnel junctions

et al. 2012

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Epitaxial spin-filter tunnel junctions based on the ferromagnetic semiconductor europium monoxide (EuO) are investigated by means of density functional theory. In particular, we focus on the spin transport properties of Cu(100)/EuO(100)/Cu(100) junctions. The dependence of the transmission coefficient and the current-voltage curves on the interface spacing and EuO thickness is explained in terms of the EuO density of states and the complex band structure. Furthermore, we also discuss the relation between the spin transport properties and the Cu-EuO interface geometry. The level alignment of the junction is sensitively affected by the interface spacing, since this determines the charge transfer between EuO and the Cu electrodes. Our calculations indicate that EuO epitaxially grown on Cu can act as a perfect spin filter, with a spin polarization of the current close to 100%, and with both the Eu-5d conduction-band and the Eu-4f valence-band states contributing to the coherent transport. For epitaxial EuO on Cu, a symmetry filtering is observed, with the 1 states dominating the transmission. This leads to a transport gap larger than the fundamental EuO band gap. Importantly, the high spin polarization of the current is preserved up to large bias voltages.

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Effect of gadolinium doping on the electronic band structure of europium oxide

Cited by 25 publications

References 63 publications

Antiferromagnetic coupling in EuO1−x

Antiferromagnetic coupling in EuO1−x

Magnetoelectric coupling at the EuO/BaTiO3 interface

Electronic transport through EuO spin-filter tunnel junctions

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