Comparison of line shortening assessed by aerial image and wafer measurements

Ziegler, Wolfram; Pforr, Rainer; Thiele, Joerg; Maurer, Wilhelm

doi:10.1117/12.301203

Cited by 8 publications

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“…However, there is no clear understanding how the process may affect the outcome. A recent paper [3] by W. Ziegler, et al shows the effect of adding small serifs to line ends on line end shortening based on aerial image and wafer measurement. This paper will discuss the effect of Laser Proximity correction (LPC) and the reticle manufacturing processes on pattern fidelity.…”

Section: Introductionmentioning

confidence: 98%

Advanced high-resolution mask processes using optical proximity correction

Chan

1999

SPIE Proceedings

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Section: Introductionmentioning

confidence: 98%

Advanced high-resolution mask processes using optical proximity correction

Chan

1999

SPIE Proceedings

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“…Ziegler et al 5 produced photomasks using a laser direct writing machine. By adding small serifs to the reticles with feature size 1.25 m, he achieved quality sufficient for the fabrication of 0.25-m patterns on wafers by projection printing.…”

Section: Introductionmentioning

confidence: 99%

Precompensation approach for improving the quality of laser direct writing patterns by a modified proximity function

2000

Opt. Eng

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By applying energy conservation to the effect of a laser beam on a resist, a modified proximity function is proposed. The measured data on energy absorption in a photoresist are fitted well with the modified function. By using the new model, an effective precompensation method can be used to correct proximity effects in laser direct writing. Experimental results have been obtained on a laser direct writing machine with line width of 0.6 m.

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“…Resist simulation -especially for 2dimensional effects -is still an area with room for improvement [7]. So Fig.…”

Section: Introductionmentioning

confidence: 99%

<title>Mask error enhancement factor</title>

Maurer

2000

SPIE Proceedings

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Optical lithography at the limit of resolution is a highly non-linear pattern transfer process. One consequence of this is an apparent magnification of mask errors. The paper first demonstrates early experimental evidence of this effect. Then it assesses the influence of pattern geometry, of the lithography tool setup, and of different optical enhancement techniques on the MEEF using primarily simulation data. The correspondence of MEEF as an effect of mask linewidth variations to the increased printability of mask defects is illustrated. Strategies to minimize the MEEF -like alternating phase shift masks -are presented. Because the MEEF describes conveniently the concerted action of all components on the whole lithographic pattern transfer process, it is proposed to use the MEEF as a new yardstick to characterize the degree of difficulty of a given lithographic process.

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Comparison of line shortening assessed by aerial image and wafer measurements

Cited by 8 publications

References 0 publications

Advanced high-resolution mask processes using optical proximity correction

Advanced high-resolution mask processes using optical proximity correction

Precompensation approach for improving the quality of laser direct writing patterns by a modified proximity function

<title>Mask error enhancement factor</title>

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