Comparison of Hydrogen Sensing Properties of Schottky Diodes Based on SiC and <I>β</I>-Ga<SUB>2</SUB>O<SUB>3</SUB> Single Crystal

Devices based on series-connected Schottky junctions and β-Ga&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;/SiC heterojunctions characterized as hydrogen sensors

“…The I - are similar to the behavior in a conventional gas sensor device with a Schottky diode structure. We have reported on a hydrogen gas sensor with a Schottky diode structure fabricated using a β-Ga 2 O 3 single-crystal substrate (Nakagomi et al, 2011b). The dependence of I -V characteristics on hydrogen concentration is similar to the characteristics of the Pt/Ga 2 O 3 /n-SiC device shown in Fig.…”

P1.0.2 Hydrogen Gas Sensor Based on β-Ga2O3 Thin Film with a Function of Self Temperature Compensation

“…Ga 2 O 3 acted as a gas-sensitive electrical resistance even in MOS structure using Ga 2 O 3 layer and SiC reported by Trinchi et al [3]. Nakagomi et al studied hydrogen sensor with Schottky diode structure based on Ga 2 O 3 single crystal [4,5].…”

Hydrogen Sensing Characteristics of Pt Schottky Diodes on () and (010) Ga2O3Single Crystals

“…Nakaomi et al also demonstrated highlysensitive hydrogen gas sensors, which could be operated reliably at high temperatures above 400 • C using the field-effect transistors on Ga 2 O 3 thin film and Schottky diodes on β-Ga 2 O 3 single crystals. [15][16][17][18] It is of great importance to study the hydrogen adsorption on Ga 2 O 3 surface in order to understand hydrogen sensing mechanism and improve its hydrogen sensitivity. Jochum et al found that the hydrogen adsorption on Ga 2 O 3 formed OH below 200 • C and GaH species above 200 • C with Fourier transform infrared spectroscopy.…”