Comparison of growth methods for Si/SiO2 nanostructures as nanodot hetero-emitters for photovoltaic applications

Structural properties of Si/SiO2 nanostructures grown by decomposition of substoichiometric SiOxNy layers for photovoltaic applications

“…The increasing inter‐dot distance decreases the current density through the SiO x N y system by reducing the tunneling current through the SiO 2 barriers, which separate the nanodots. As was shown in an earlier publication 27, the inter‐dot distance becomes then too large for tunneling processes (i.e. >3 nm 28).…”