Characterization of semiconductor devices and wafer materials via sub-nanosecond time-correlated single-photon counting

Buschmann, Volker; Hempel, Hannes; Knigge, Andrea; Kraft, C.; Roczen, Maurizio; Weyers, M.; Siebert, Thorsten; Koberling, Felix

doi:10.1007/s10812-013-9786-4

Cited by 6 publications

(4 citation statements)

References 21 publications

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“…A pixel dwell time of 150ms was adapted to the slow excitation repetition rate, which is necessary due to the long luminescence lifetime of the material. The luminescence decays were fitted with a 4-exponential model using the data acquisition and analysis software SymPhoTime 64 (PicoQuant GmbH), and the intensity weighted average lifetime was plotted in the images using a color coding [7].…”

Section: Experiments and Resultsmentioning

confidence: 99%

“…The morphology of nanostructured surface and its influence to PL enhancement were investigated. Additionally, the N-B donor-and-acceptor pair (DAP) recombination time (lifetime) of the samples was mapped using a confocal microscope with the capability to measure time-resolved photoluminescence (TRPL) [7].…”

Section: Introductionmentioning

confidence: 99%

“…First, the morphology of nanostructured surface and its influence to photoluminescence enhancement were investigated. Then, the surface lifetime mapping of the samples was scanned by Micro Time 100 confocal microscope (PicoQuant GmbH, Berlin) [10].…”

mentioning

confidence: 99%

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Photoluminescence Enhancement in Nanotextured Fluorescent SiC Passivated by Atomic Layer Deposited Al2O3 Films

Lu¹,

Ou²,

Jokubavičius

et al. 2016

MSF

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The influence of thickness of atomic layer deposited Al2O3 films on nanotextured fluorescent 6H-SiC passivation is investigated. The passivation effect on the light emission has been characterized by photoluminescence and time-resolved photoluminescence at room temperature. The results show that 20nm thickness of Al2O3 layer is favorable to observe a large photoluminescence enhancement (25.9%) and long carrier lifetime (0.86ms). This is a strong indication for an interface hydrogenation that takes place during post-thermal annealing. These result show that an Al2O3 layer could serve as passivation in fluorescent SiC based white LEDs applications.

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Section: Experiments and Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Photoluminescence Enhancement in Nanotextured Fluorescent SiC Passivated by Atomic Layer Deposited Al2O3 Films

Lu¹,

Ou²,

Jokubavičius

et al. 2016

MSF

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“…20 For the excitation, a pulsed diode laser operated at 40 MHz at 635 nm was focused onto the sample. The detection of the PL signal was carried out using a single-photon avalanche diode.…”

Section: Methodsmentioning

confidence: 99%

Spatially resolved measurements of charge carrier lifetimes in CdTe solar cells

Kraft

Hempel

Buschmann

et al. 2013

Journal of Applied Physics

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The lifetime of the minority charge carriers in polycrystalline Cadmium Telluride (pc-CdTe) for solar cell applications is a crucial material parameter and has been determined by analysis of the decay curves of the luminescence signal. Both the lateral and the transversal distributions of the carrier lifetime on the surface and in the bulk of pc-CdTe material as well as the respective solar cell characteristics were measured as a function of the deposition technique, the activation treatment, and the incorporation of additional group-V elements. The results are compared to prior studies. It was found that an activation process passivates grain boundaries and increases the carrier lifetime, which is then higher at the pn-junction than at the surface. Furthermore, nitrogen and phosphorus doping of the CdTe absorber material influences the charge carrier lifetime. The results show that the spatial resolved measurement of the carrier lifetime in pc-CdTe gives an important insight to the charge carrier dynamics of the material.

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Impact of In Situ Annealing Time on CdTe Polycrystalline Film and Device Performance

Lai

et al. 2018

Journal of Elec Materi

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Characterization of semiconductor devices and wafer materials via sub-nanosecond time-correlated single-photon counting

Cited by 6 publications

References 21 publications

Photoluminescence Enhancement in Nanotextured Fluorescent SiC Passivated by Atomic Layer Deposited Al<sub>2</sub>O<sub>3</sub> Films

Photoluminescence Enhancement in Nanotextured Fluorescent SiC Passivated by Atomic Layer Deposited Al<sub>2</sub>O<sub>3</sub> Films

Spatially resolved measurements of charge carrier lifetimes in CdTe solar cells

Impact of In Situ Annealing Time on CdTe Polycrystalline Film and Device Performance

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