Comparison of diverse resistive switching characteristics and demonstration of transitions among them in Al-incorporated HfO₂-based resistive switching memory for neuromorphic applications

Abstract

Diverse resistive switching behaviors are observed in the Pt/HfAlOx/TiN memory device depending on the compliance current, the sweep voltage amplitude, and the bias polarity.

Multifunctional Bipolar and Complementary Resistive Switching in HOIP Memristors by the Control of Compliance Current

“…28 Two BRSs and one CRS were demonstrated in a HfO 2 ReRAM, which could be controlled by changing the compliance current (CC). 29 Similar BRS and CRS behavior has been reported in a single-layer HfO 2 -based cross-point ReRAM, as well as in a HfO 2 /Al 2 O 3 /TiO x trilayer structure by Banerjee et al 30−32 In the former case, the transition from BRS to CRS was attributed to the intrinsic anionic rearrangement at the elevated temperature. In the latter case, this transition was due to the oxygen-vacancy redistribution in HfO 2 and TiO x layers with the Al 2 O 3 layer acting as a tunnel barrier.…”

“…The coexistence of two BRSs in the TiO 2 memristor was due to oxygen-vacancy drift/diffusion processes and an oxygen exchange reaction at the interface that could be controlled by the amplitude of the applied negative voltage . Two BRSs and one CRS were demonstrated in a HfO 2 ReRAM, which could be controlled by changing the compliance current (CC) . Similar BRS and CRS behavior has been reported in a single-layer HfO 2 -based cross-point ReRAM, as well as in a HfO 2 /Al 2 O 3 /TiO x trilayer structure by Banerjee et al − In the former case, the transition from BRS to CRS was attributed to the intrinsic anionic rearrangement at the elevated temperature.…”

“…Almost all these devices that showed multiple types of resistance switching needed either memristive devices connected anti-serially or multiple active layers stacked between electrodes, which is more or less associated with reduced device volume density in a crossbar architecture. Attempts were made to address the twin problems of sneak current and reduced device density where multiple BRS and CRS behaviors were reported in MIM structures with materials like SrTiO 3 , TiO 2 , Ta 2 O 5 , HfO 2 , and so forth. − Two different types of BRSs, originating from the modification of the Schottky barrier and oxygen-vacancy migration, were observed in an SrTiO 3 ReRAM . Also, the two types of BRSs in Ta 2 O 5 were attributed to gradual annihilation of conductive filament (CF) due to the migration of oxygen ions and to the rupture of CFs due to Joule heating .…”

Neuromorphic Synapses with High Switching Uniformity and Multilevel Memory Storage Enabled through a Hf-Al-O Alloy for Artificial Intelligence

“…The term "suboxide" refers to an oxygen-deficient condition induced by a redox interaction between HfAlO x and the TiN BE, resulting in oxygen vacancies. 8,48 The XPS spectra of Ti 2p are illustrated in Figure 1e and can be fitted with three doublets. The bulk TiN produces the first doublet with the Ti 2p 3/2 component centered at 454.7 eV.…”

Alloyed High-k-Based Resistive Switching Memory in Contact Hole Structures

“…These kinds of RRAM I-V curves show gradual resistive switching for both set and reset processes [21]. Although a filamentary RRAM can also ensure multilevel conductance by switching compliance current, it is even easier to achieve this with interface type RRAM, thanks to this gradual resistive switching feature [24]. This means it can be used for biological synapsis for neuromorphic computing.…”