Comparison of defects produced by fast neutrons and 60Co-gammas in high-resistivity silicon detectors using deep-level transient spectroscopy

Moll, M.; Feick, H.; Fretwurst, E.; Lindström, G.; Schütze, C.

doi:10.1016/s0168-9002(97)00003-x

Cited by 65 publications

(31 citation statements)

References 15 publications

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“…No significant influence of oxygen introduced by this technique on radiation hardness has been found. However, infrared spectroscopy measurements performed by ITME [4] indicate that most of the oxygen atoms were not interstitial, as would be desired for radiation hardness improvement [1,2]. Therefore, an additional experiment is currently being prepared for analysis of radiation hardness of detectors fabricated from silicon enriched with interstitial oxygen.…”

Section: Discussionmentioning

confidence: 99%

“…Two of the most challenging operation alterations owing to the radiation damage are the increase of the reverse DC current and the variation of the full depletion voltage. It has been suggested [1,2] that the electrically active defect responsible for the formation of positive space charge under bias is the divacancyoxygen complex, V 2 -O. Therefore, by increasing the concentration of oxygen and enhancing the formation of V-O complexes, it has been predicted that the concentration of vacancies will be reduced, leading to the suppression of the V 2 -O formation.…”

Section: Introductionmentioning

confidence: 99%

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Studies of radiation hardness of oxygen enriched silicon detectors

Ruzin

Casse

Gläser

et al. 1999

Nuclear Instruments and Methods in Physics Research Section A:

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Detectors of high-energy particles sustain substantial structural defects induced by the particles during the operation period. Some of the defects have been found to be electrically active, degrading the detector's performance. Understanding the mechanisms of the electrical activities and learning to suppress their influence are essential if long 'lifetime' detectors are required. This work reports about radiation hardness of silicon P-I-N devices fabricated from oxygen-enriched, high-resistivity material. The high and nearly uniform concentration of oxygen in float-zone silicon has been achieved by diffusion of oxygen from SiO 2 layers.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Studies of radiation hardness of oxygen enriched silicon detectors

Ruzin

Casse

Gläser

et al. 1999

Nuclear Instruments and Methods in Physics Research Section A:

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“…were already investigated in detail and no correlation with the "macroscopic" behavior of the diodes could be established [35][36][37][38][39][40][41][42][43][44][45][46]. The main characteristics of defects, from the electrical point of view, are the emission rates of carriers in the conduction and valence bands given by:…”

Section: Defect Properties and Detector Performancementioning

confidence: 99%

Radiation-induced point- and cluster-related defects with strong impact on damage properties of silicon detectors

Pintilie

Lindstroem

Junkes

et al. 2009

Nuclear Instruments and Methods in Physics Research Section A:

125

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This work focuses on the investigation of radiation induced defects responsible for the degradation of silicon detectors. Comparative studies of the defects induced by irradiation with 60 Co-γ rays, 6 and 15 MeV electrons, 23 GeV protons and reactor neutrons revealed the existence of point defects and cluster related centers having a strong impact on damage properties of Si diodes. The detailed relation between the "microscopic" reasons as based on defect analysis and their "macroscopic" consequences for detector performance are presented. In particular, it is shown that the changes in the Si device properties after exposure to high levels of 60 Co-γ doses can be completely understood by the formation of two point defects, both depending strongly on the oxygen concentration in the silicon bulk. Specific for hadron irradiation are the annealing effects which decrease respectively increase the originally observed damage effects as seen by the changes of the depletion voltage. A group of three cluster related defects, revealed as deep hole traps, proved to be responsible specifically for the reverse annealing. Their formation is not affected by the oxygen content or silicon growth procedure suggesting that they are complexes of multi-vacancies located inside extended disordered regions.

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“…As they become incident onto the material, the particles penetrate the material and collide with the semiconductor lattice. The incident particles transfer sufficient energy to the silicon to displace an atom within the lattice out of its normal position such that interstitial atoms and vacancies are generated in the bulk of the material [3]. The result is that the lattice structure of the material changes and this degrades the performance of the devices.…”

Section: Introductionmentioning

confidence: 99%

Depth Analysis of Crystalline Silicon Used for Radiation-Hard Detectors

Moloi

McPherson

2017

Acta Phys. Pol. A

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Depth analysis of metal-doped crystalline silicon by the X-ray photoelectron spectroscopy technique is presented in this work. The results from this technique are used to complement those from previous techniques. The metals diffused into the silicon are gold, platinum, erbium, and niobium. In silicon, these metals induce defects that are responsible for relaxation behaviour of the material. Relaxation material is radiation-hard since the effects of radiation on devices fabricated on the material are suppressed. Considerable amounts of gold, platinum, and niobium are found in the silicon bulk. The results of this work are in good agreement with those reported earlier on the same samples using the Rutherford backscattering technique. The spectra of the natural contaminants, carbon and oxygen, are also analysed in this work.

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Comparison of defects produced by fast neutrons and 60Co-gammas in high-resistivity silicon detectors using deep-level transient spectroscopy

Cited by 65 publications

References 15 publications

Studies of radiation hardness of oxygen enriched silicon detectors

Studies of radiation hardness of oxygen enriched silicon detectors

Radiation-induced point- and cluster-related defects with strong impact on damage properties of silicon detectors

Depth Analysis of Crystalline Silicon Used for Radiation-Hard Detectors

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