No abstract

No abstract

No abstract

Silicide formation at the Ti/Si(111) interface J. Vac. Sci.

Two sets of silicon detectors were irradiated with 1 MeV neutrons to different fluences and then characterized. The first batch were ordinary p - i - n photodiodes fabricated from high-resistivity silicon, while the second batch were gold-doped power diodes fabricated from silicon material initially of low resistivity . The increase in reverse leakage current after irradiation was found to be more in the former case than in the latter. The fluence dependence of the capacitance was much more pronounced in the p - i - n diodes than in the gold-doped diodes. Furthermore, photo current generation by optical means was less in the gold doped devices. All these results suggest that gold doping in silicon somewhat suppresses the effects of neutron irradiation.

No abstract

No abstract

The effects of radiation damage in two silicon p-i-n photodiodes fabricated from high resistivity material have been studied. The devices have been irradiated by 1 MeV neutrons to three different fluences up to 2.5 × 10 14 n cm −2 . Current, capacitance and charge measurements were performed prior to irradiation and soon after. Our results indicate that the damage has degraded the charge-collection efficiency, that the devices have undergone type inversion from n-type to apparent p-type at fluences as low as 3 × 10 13 n cm −2 , and that the substrate material has become somewhat 'relaxation-like' after irradiation. It is suggested here that irradiated silicon is relaxation material.