Comparison of carrier localization effects between InAs quantum dashes and quantum dots in a DWELL (dashes- or dots-in-a-well) configuration

Addamane, Sadhvikas; Rashidi, Arman; Mansoori, A.; Dawson, Noel; Shima, Darryl M.; Rotter, Thomas; Wang, G.T.; Balakrishnan, Ganesh

doi:10.1016/j.physe.2020.114376

Cited by 1 publication

(4 citation statements)

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“…The FWHM values (Fig. 6 c) increase with temperature, consistent with previous studies on Qdashes [ 17 ]. The increased FWHM of PG-3 is a consequence of the height dispersion discussed earlier.…”

Section: Resultssupporting

confidence: 90%

“…The increase in FWHM is not always a disadvantage. Studies comparing Qdash and QW lasers have shown that Qdashes can have a broader linewidth, but superior lasing performance owing to their quasi-zero dimensionality [ 17 , 35 ]. Furthermore, the effect of inhomogeneous broadening on Qdashes is expected to be less severe as on QDs [ 36 ].…”

Section: Resultsmentioning

confidence: 99%

“…The high temperature data (> 150 K) were fitted with the Varshni equation using parameters from bulk InAs. Whereas QDs show an S-curve trend due to carrier redistribution and thermoactivation, Qdashes behave more like QWs due to their reduced carrier localization [ 17 ]. It is only below 75 K where the peak intensities deviate noticeably from the Varshni model.…”

Section: Resultsmentioning

confidence: 99%

“…Reports on the photoluminescence of InP-based InAs Qdashes emitting in the 1.8–2.1-μm range are relatively sparse [ 17 – 22 ]. In most cases, the QDs are grown using metal organic vapor phase epitaxy, which could lead to blue-shifted emission due to heat-induced In-Ga intermixing during the growth of the top device layers.…”

Section: Introductionmentioning

confidence: 99%

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Punctuated growth of InAs quantum dashes-in-a-well for enhanced 2-μm emission

et al. 2023

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InAs quantum dashes (Qdash) engineered to emit near 2 μm are envisioned to be promising quantum emitters for next-generation technologies in sensing and communications. In this study, we explore the effect of punctuated growth (PG) on the structure and optical properties of InP-based InAs Qdashes emitting near the 2-μm wavelength. Morphological analysis revealed that PG led to an improvement in in-plane size uniformity and increases in average height and height distribution. A 2 × boost in photoluminescence intensity was observed, which we attribute to improved lateral dimensions and structural stabilization. PG encouraged formation of taller Qdashes while photoluminescence measurements revealed a blue-shift in the peak wavelength. We proposed that the blue-shift originates from the thinner quantum well cap and decreased distance between the Qdash and InAlGaAs barrier. This study on the punctuated growth of large InAs Qdashes is a step toward realizing bright, tunable, and broadband sources for 2-μm communications, spectroscopy, and sensing.

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Section: Resultssupporting

confidence: 90%