Comparison of amplifier gain enhancement techniques for GaAs MESFET analogue integrated circuits

Larson, L.E.; Temes, Gábor C.; Law, S.

doi:10.1049/el:19860780

Cited by 30 publications

(6 citation statements)

References 2 publications

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“…2(b) depicts a DID load (also known as self bootstrapping), which is achieved by tying the gate terminals of two cascoded DFET transistors together to the source of the bottom DFET, which offers an enhanced output impedance by a feedback factor of (1+gmrds) [10].…”

Section: Bmentioning

confidence: 99%

High performance two-stage bootstrapped GaAs comparator with gain enhancement

Lan

Ning

Wang

et al. 2015

2015 IEEE 16th Annual Wireless and Microwave Technology Conference (WAMICON)

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A high performance GaAs pHEMT comparator using a double cascode self-bootstrapping configuration with gain enhancement is proposed and investigated in this paper.An improved active load using D-mode HEMT devices is discussed so that the differential-mode input can be further reduced. Fully differential input pair can be realized by either E or D mode FETs. The comparator operates with a single power supply and generates a single output with a buffer stage for driving a large load or subsequent stages. With newly designed comparator, not only small propagation delay of 339 psec, but also high output voltage swing 1.5 V have been demonstrated. Analysis of the adapted comparator circuit and optimization of all transistor sizes for its best performance is also presented in detail. The overall performance is on par with prior attempts.

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Section: Bmentioning

confidence: 99%

High performance two-stage bootstrapped GaAs comparator with gain enhancement

Lan

Ning

Wang

et al. 2015

2015 IEEE 16th Annual Wireless and Microwave Technology Conference (WAMICON)

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“…'The performance of the compensation capacitor CE will be verified by SPICE simulations given in Section V. are available in GaAs technology. A different technique, "self-bootstrappeding" [238], is suitable for circuits with single-channel devices; it has a simple circuit structure sin피lar to "cascade." The only problem with applying this technique to GaAs technology is that the frequency response is reduced.…”

Section: Otamentioning

confidence: 99%

The Design of High-Frequency Continuous-Time Integrated Analog Signal Processing Circuits

Wu¹

2000

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“…Nevertheless, switched capacitor circuits have been developed permitting low-gain amplifiers and an impressive 3rd-order lowpass filter has been demonstrated with a switching frequency of 100 MHz, at least three times the maximum achieved with CMOS technology [2]. Meanwhile, the problem of realizing high-gain amplifiers using available GaAs devices has been addressed using a variety of approaches [3,4,5]. In 1989 a 2nd-order bandpass filter with a switching rate of 500 MHz using 60-dB gain amplifiers was demonstrated [6,7].…”

Section: Review Of Gaas Circuit Designmentioning

confidence: 99%

Measurements on Gallium Arsenide building blocks and implications for analog IC design

Haigh

Toumazou

Newett

1991

Analog Integr Circ Sig Process

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Gallium Arsenide technology has offered the promise of very high frequency opeation but its potential has not been fully realized due to technological problems which have revealed themselves in undesirable and unpredictable device characteristics. This article presents measured DC characteristics for some current mirrors and transconductors which are believed to be important building blocks for future high-speed GaAs communication circuits. The results presented validate the building block designs within the measurement limitations and show that technology improvements are now producing devices of sufficient quality to allow a sophisticated approach to GaAs circuit designs.

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Comparison of amplifier gain enhancement techniques for GaAs MESFET analogue integrated circuits

Cited by 30 publications

References 2 publications

High performance two-stage bootstrapped GaAs comparator with gain enhancement

High performance two-stage bootstrapped GaAs comparator with gain enhancement

The Design of High-Frequency Continuous-Time Integrated Analog Signal Processing Circuits

Measurements on Gallium Arsenide building blocks and implications for analog IC design

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