Comparison between low-dropout voltage regulators designed with line and nanowire tunnel field effect transistors using experimental data

Tolêdo, Rodrigo do Nascimento; Silva, Wenita de Lima; Filho, Walter Gonçalez; Nogueira, Alexandro de Moraes; Martino, João Antônio; Agopian, Paula Ghedini Der

doi:10.1016/j.sse.2022.108328

Solid-State Electronics

2022

DOI: 10.1016/j.sse.2022.108328

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Comparison between low-dropout voltage regulators designed with line and nanowire tunnel field effect transistors using experimental data

Rodrigo do Nascimento Tolêdo

Wenita de Lima Silva

Walter Gonçalez Filho

et al.

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Comparison between low-dropout voltage regulators designed with line and nanowire tunnel field effect transistors using experimental data

Cited by 1 publication

References 10 publications

Comparison of low-dropout voltage regulators designed with line and nanowire tunnel-FET experimental data including a simple process variability analysis

Comparison of low-dropout voltage regulators designed with line and nanowire tunnel-FET experimental data including a simple process variability analysis

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