Comparative Study on Performance of IGZO Transistors With Sputtered and Atomic Layer Deposited Channel Layer

Cho, Min Hoe; Seol, Hyunju; Song, Aeran; Choi, Seonjun; Song, Yun-Heub; Yun, Pil Sang; Chung, Kwun Bum; Bae, Jong Uk; Park, Kwon‐Shik; Jeong, Jae Kyeong

doi:10.1109/ted.2019.2899586

Cited by 85 publications

(62 citation statements)

References 27 publications

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“…Previous reports on high-performance TFTs with a-IGZO, [20,21] IZTO, [22,23] or IGZTO [24] channel materials deposited by ALD showed field-effect mobilities as high as 74 cm 2 V -1 s -1 , 26.8 cm 2 V -1 s -1 , and 46.7 cm 2 V -1 s -1 respectively, but contained scarce and costly indium and required a more complex quaternary or quinary alloy process. There have been several reports of indium-free ternary ZTO deposited by ALD, [25][26][27][28][29][30][31][32] but only two previous studies have described thin-film transistors made using ALD ZTO.…”

Section: Introductionmentioning

confidence: 99%

High‐Performance Zinc Tin Oxide TFTs with Active Layers Deposited by Atomic Layer Deposition

Allemang

Cho

Trejo

et al. 2020

Adv Elect Materials

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New deposition techniques for amorphous oxide semiconductors compatible with silicon back end of line manufacturing are needed for 3D monolithic integration of thin‐film electronics. Here, three atomic layer deposition (ALD) processes are compared for the fabrication of amorphous zinc tin oxide (ZTO) channels in bottom‐gate, top‐contact n‐channel transistors. As‐deposited ZTO films, made by ALD at 150–200 °C, exhibit semiconducting, enhancement‐mode behavior with electron mobility as high as 13 cm2 V−1 s−1, due to a low density of oxygen‐related defects. ZTO deposited at 200 °C using a hybrid thermal‐plasma ALD process with an optimal tin composition of 21%, post‐annealed at 400 °C, shows excellent performance with a record high mobility of 22.1 cm2 V–1 s–1 and a subthreshold slope of 0.29 V dec–1. Increasing the deposition temperature and performing post‐deposition anneals at 300–500 °C lead to an increased density of the X‐ray amorphous ZTO film, improving its electrical properties. By optimizing the ZTO active layer thickness and using a high‐k gate insulator (ALD Al2O3), the transistor switching voltage is lowered, enabling electrical compatibility with silicon integrated circuits. This work opens the possibility of monolithic integration of ALD ZTO‐based thin‐film electronics with silicon integrated circuits or onto large‐area flexible substrates.

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Section: Introductionmentioning

confidence: 99%

High‐Performance Zinc Tin Oxide TFTs with Active Layers Deposited by Atomic Layer Deposition

Allemang

Cho

Trejo

et al. 2020

Adv Elect Materials

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“…Thus, the change in the O2 spectrum is of high interest. [ 17 ] Apparently, the O2 peak intensity was observed to decrease, as the fraction of InO y increases. Figure 4c shows the quantified the relative fractions or concentration of oxygen species in given mixed oxide films, which are based on the areas of deconvoluted XPS spectra.…”

Section: Resultsmentioning

confidence: 99%

Optimizing Oxide Mixing Ratio for Achieving Energy‐Efficient Oxide Thin‐Film Transistors

Moon

Lee

Hwanjae

et al. 2021

Physica Status Solidi (a)

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With an atomic layer deposition (ALD) method, mixed oxide thin films can be formed. This feature allows to experimentally deduce the mixing ratio of oxide components, which yields optimal device properties. Herein, all‐oxide bottom‐gate thin‐film transistors (TFTs) having binary ZnOx–InOy channel are fabricated. To find composition, which yields energy‐efficient TFTs of low subthreshold swing (SS) characteristics, mixed oxide channels of ZnOx and InOy are prepared, using a plasma‐enhanced ALD method and liquid precursors of diethyl zinc and 3‐(dimethylamino)propyl‐dimethyl indium. Channel comprised of ZnOx:InOy = 1:2 exhibits the best transfer characteristics with a highest field effect mobility and a lowest SS of 30.3 cm2 V s−1 and 0.14 V dec−1, respectively. The variation on SS is discussed quantitatively in terms of channel depletion and the quantitative description on oxygen vacancy.

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“…Research trends (Table 1) for vacuum-processed oxide TFTs are as follows: (1) variation in oxide semiconductor materials and use of high-k dielectrics to achieve high µ [6][7][8][9][10][11][12][13]; (2) low-cost and non-toxic implementation using indium-free compositions [14][15][16]; (3) high-reliability components based on flexible substrates [17]; and (4) vacuum-deposition technology that uses non-sputtering methods (e.g. atomiclayer deposition (ALD) or metalorganic chemical-vapor deposition (MOCVD)) [14,16,18].…”

Section: Metal Oxide Tftsmentioning

confidence: 99%

Recent progress in the development of backplane thin film transistors for information displays

Jang

Parkjoonhui

et al. 2020

Journal of Information Display

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This review aims to provide a technical roadmap and progress update for backplane thin film transistors (TFTs) used in organic light emitting diodes flat panel displays and next-generation flexible displays. In the introduction, we provide a general overview as well as trends in research on backplane TFTs. The main section describes current technical level and future prospects for amorphous metal oxide, semiconducting carbon nanotube, 2D transition metal dichalcogenide, and organic TFTs. The summary and prospects are provided in the conclusion.

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Comparative Study on Performance of IGZO Transistors With Sputtered and Atomic Layer Deposited Channel Layer

Cited by 85 publications

References 27 publications

High‐Performance Zinc Tin Oxide TFTs with Active Layers Deposited by Atomic Layer Deposition

High‐Performance Zinc Tin Oxide TFTs with Active Layers Deposited by Atomic Layer Deposition

Optimizing Oxide Mixing Ratio for Achieving Energy‐Efficient Oxide Thin‐Film Transistors

Recent progress in the development of backplane thin film transistors for information displays

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