Recent progress in the development of backplane thin film transistors for information displays

Ji, Dongseob; Jang, Jiyong; Parkjoonhui,; kimdasol,; Rim, You Seung; Kyung, Hwang Do; Young, Noh Yong

doi:10.1080/15980316.2020.1818641

Cited by 70 publications

(42 citation statements)

References 128 publications

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“…However, these methods still have not solved the deterioration of picture quality at very low luminance ( < 2 nit). Various analyses on the causes of picture quality deterioration and its improvements are still needed to develop new technologies of backplane [30].…”

Section: Contact Hyun Jae Kimmentioning

confidence: 99%

Enhancement of picture quality on ultra-low brightness by optimizing the electrical potential required for OLED charging in the AMOLED displays

Min

Kim³

et al. 2021

Journal of Information Display

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The principal causes of the poor picture quality on active matrix organic light-emitting diode (AMOLED) displays, operating under extremely low brightness and gray-scale conditions, were analyzed and verified by measuring and modelling of the electrical simulations. Through the analysis, it was found that the deteriorated picture quality was induced by a delayed saturation voltage, which means the electric potential difference between the initial voltage applied to the anode of the OLED (V init ) and the OLED saturated voltage (V sat ) for emission. This is because the deviations of pico-ampere-level currents and delayed OLED charging prior to light emission increased the saturation voltage when there were low driving currents. Thus, we optimized the voltage by increasing V init from −4.5 to −2.7 V, effectively eliminating image deterioration by reducing the OLED charging delay. Thus, the proposed approach opens up advancements of obtaining superior picture quality with ultra-low luminance, even in the dark illuminance environments. We discuss how OLED picture quality may be enhanced under low brightness, including the driving methods, design considerations, and processes involved.

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Section: Contact Hyun Jae Kimmentioning

confidence: 99%

Enhancement of picture quality on ultra-low brightness by optimizing the electrical potential required for OLED charging in the AMOLED displays

Min

Kim³

et al. 2021

Journal of Information Display

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“…A CAGR of 17.34% is expected to register for TFT market during 2021-2026 [1]. TFT is used as a pixel switching element in LED or flat panel displays [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

Analog/RF Performance Analysis of a-ITZO Thin Film Transistor

Jain

Singh

Sharma

et al. 2022

Silicon

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This work reports RF and analog performance analysis of an amorphous Indium Tin Zinc Oxide thin film transistor. The various parameters affecting the performance of a-ITZO TFT like drain current, drain conductance, output resistance, transconductance, transconductance generation factor, early voltage, intrinsic gain, capacitances, cut off frequency, maximum frequency of oscillation, transconductance frequency product, gain frequency product, gain bandwidth product and gain transconductance frequency product have been closely examined. The device is further analyzed to investigate the impact of variation in physical parameters viz. dielectric material, dielectric thickness (𝐷𝑡) and temperature (T) on the RF/Analog performance. Use of high-k dielectric material in the simulated structure has resulted in low subthreshold slope (SS) of 0.62 V/decade, On voltage (𝑉𝑜𝑛) of -0.29 V, 𝐼𝑜𝑛/𝐼𝑜𝑓𝑓 ratio of ~ 10 9 , intrinsic gain (A v ) of 104.5 dB and gain frequency product (GFP) of 1.86 GHz. The best results for dielectric thickness variation are obtained for D t of 150 nm with SS of 0.22 V/decade, 𝑉𝑜𝑛 of -0.26 V, 𝐼𝑜𝑛/𝐼𝑜𝑓𝑓 of ~ 10 10 , A v of 175.69 dB and GFP of 2.39 GHz. In order to investigate device thermal reliability and stability, temperature analysis has also been done. To demonstrate the circuit level implementation of the simulated structure, a resistive load inverter circuit is simulated and analyzed for different variations (high-k, 𝐷𝑡 and T) . It has also been concluded that TFT with high-k material or thinner dielectric at T=300 K provides best performance. This analysis confirms the potential of a-ITZO TFTs to realize high performance analog/RF circuits.

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“…In display manufacturing, using the solution process, time and cost can be reduced by more than 60% by direct printing at room temperature instead of using a vacuum deposition process [ 5 ]. In this regard, the possibility of solution process of amorphous oxide semiconductors (AOS) material has been paid much attention in displays, and various chemical processing methods have been developed for the solution process [ 6 , 7 , 8 ]. Because the solution process mostly targets flexible displays, lowering the process temperature is a major concern.…”

Section: Introductionmentioning

confidence: 99%

Atomic Structure Evaluation of Solution-Processed a-IZO Films and Electrical Behavior of a-IZO TFTs

Bae

2022

Materials

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Understanding the chemical reaction pathway of the metal–salt precursor is essential for modifying the properties of solution-processed metal-oxide thin films and further improving their electrical performance. In this study, we focused on the structural growth of solution-processed amorphous indium-zinc-oxide (a-IZO) films and the electrical behavior of a-IZO thin-film transistors (TFT). To this end, solution-processed a-IZO films were prepared with respect to the Zn molar ratio, and their structural characteristics were analyzed. For the structural characteristic analysis of the a-IZO film, the cross-section, morphology, crystallinity, and atomic composition characteristics were used as the measurement results. Furthermore, the chemical reaction pathway of the nitrate precursor-based IZO solution was evaluated for the growth process of the a-IZO film structure. These interpretations of the growth process and chemical reaction pathway of the a-IZO film were assumed to be due to the thermal decomposition of the IZO solution and the structural rearrangement after annealing. Finally, based on the structural/chemical results, the electrical performance of the fabricated a-IZO TFT depending on the Zn concentration was evaluated, and the electrical behavior was discussed in relation to the structural characteristics.

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Recent progress in the development of backplane thin film transistors for information displays

Cited by 70 publications

References 128 publications

Enhancement of picture quality on ultra-low brightness by optimizing the electrical potential required for OLED charging in the AMOLED displays

Enhancement of picture quality on ultra-low brightness by optimizing the electrical potential required for OLED charging in the AMOLED displays

Analog/RF Performance Analysis of a-ITZO Thin Film Transistor

Atomic Structure Evaluation of Solution-Processed a-IZO Films and Electrical Behavior of a-IZO TFTs

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